Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Itsuki KOBATA"'
Publikováno v:
Journal of the Japan Society for Precision Engineering, Contributed Papers. 70:666-670
The electrochemical machining in ultrapure water has been applied to copper etch back process in damascene process. This application is expected to have many merits compared to CMP(Chemical Mechanical Polishing) which is the conventional etch back pr
Publikováno v:
Journal of the Japan Society for Precision Engineering. 69:1332-1336
Publikováno v:
Journal of the Japan Society for Precision Engineering. 68:1241-1245
In order to develop a new ultra-precision and ultra-clean machining method, we studied electrochemical machining in ultrapure water. In this paper, we newly performed electrochemical machining in ultrapure water under the cathode specimen condition t
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1159-1163
In order to reveal the mechanism of the electrochemical etching process in ultrapure water, first-principles molecular -dynamics simulations for etching process of the hydrogen-terminated Si(001) surfaces by hydroxyl ion in ultrapure water were carri
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:932-936
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1438-1442
In order to reveal the mechanism of the electrochemical machining process in ultrapure water, first-principles molecular-dynamics simulations of Si(001) surfaces interacting with OH molecules were carried out on the basis of the Kohn-Sham local-densi
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1680-1686
In order to reveal the mechanism of the electrochemical processes of cathode surfaces in ultrapure water, first-principles molecular-dynamics simulations of chemical reaction on the Al(001) surfaces interacting with H atoms, H2O molecules and OH mole
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1169-1174
In order to reveal the mechanism of the electrochemical etching process in ultrapure water, first-principles molecular-dynamics simulations for the etching process of hydrogen-terminated Si(001) surfaces interacting with OH molecules were carried out
Publikováno v:
Journal of the Japan Society for Precision Engineering. 67:1321-1326
Autor:
Koji Inagaki, Masao Sakamoto, Hidekazu Goto, Hachiro Tsuchiya, Yuzo Mori, Kazuhisa Sugiyama, Tomoya Ono, Itsuki Kobata, Kikuji Hirose
Publikováno v:
Computational Materials Science. 14:77-79
In order to reveal the etching mechanism of the H-terminated Si(0 0 1) surfaces in ultrapure water, first-principles molecular dynamics simulations of H-terminated Si(0 0 1) surfaces interacting with OH molecules were carried out on the basis of dens