Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Issai Shlimak"'
Autor:
Alexander N. Ionov, Tiecheng Lu, Yossi Gofer, Judith Grinblat, David H. Dressler, Issai Shlimak, Shai Levy
Publikováno v:
Nanomaterials and Nanotechnology, Vol 1, Iss 1 (2011)
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS), High Resolutio
Externí odkaz:
https://doaj.org/article/000ec79f889b4b739ac15856929b0d2e
Autor:
Moshe Kaveh, Issai Shlimak
Publikováno v:
Graphene. :13-28
The results of measurements of the Raman spectra in the same group of monolayer graphene samples, successively subjected to irradiation with different ions, prolonged aging, and annealing under different conditions, are considered. Changes in the pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e4ad2126d0cce46e2471a2861a9b73
https://doi.org/10.4236/graphene.2020.92002
https://doi.org/10.4236/graphene.2020.92002
Autor:
Yu. Kaganovskii, V. Richter, E. Zion, Andrey Butenko, Issai Shlimak, Amos Sharoni, Moshe Kaveh, Eugene Kogan
A brief review of experiments directed to study a gradual localization of charge carriers and metal-insulator transition in samples of disordered monolayer graphene is presented. Disorder was induced by irradiation with different doses of heavy and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48064bf95c48d767359ac1797a32d369
http://arxiv.org/abs/1907.10472
http://arxiv.org/abs/1907.10472
Broadening of the Raman scattering (RS) spectra was studied in monolayer graphene samples irradiated with various dose of ions followed by annealing of radiation damage at different temperatures. It is shown that the width {\Gamma} (full width at hal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d195bd0ff5b5ac5a407b8359f1e3e3ba
Autor:
A. Haran, Issai Shlimak, S. Katz, Moshe Kaveh, Andrey Butenko, N.M. Yitzhak, Yafit Fleger, Olga Girshevitz
Publikováno v:
Applied Surface Science. 536:147812
The repeatability of the Raman scattering (RS) spectra was analyzed in monolayer and bilayer CVD-grown graphene films. Position and width of the two main RS lines (G-line and 2D-line) together with their intensity ratio I2D/IG were measured in sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce007f87c2d4822b47ca3627474479eb
https://doi.org/10.1016/j.apsusc.2020.147812
https://doi.org/10.1016/j.apsusc.2020.147812
Publikováno v:
Physical Review B. 96
The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at positive $V_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2078bbf4a4125e12d58c1f367b80bfb2
https://doi.org/10.1103/physrevb.96.245143
https://doi.org/10.1103/physrevb.96.245143
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(18)
We report the results of an investigation of ambipolar transport in a quantum well of 15 nm width in an undoped GaAs/AlGaAs structure, which was populated either by electrons or holes using positive or negative gate voltage V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::96ff37477ee2c2e8e870958030a70fa0
https://pubmed.ncbi.nlm.nih.gov/28266927
https://pubmed.ncbi.nlm.nih.gov/28266927
Autor:
Issai Shlimak
The book provides an overview of the author's work devoted to experimental study of hopping conductivity, which includes substantial contributions, such as solving the problem of critical indices of the metal-insulator transition in doped semiconduct
Autor:
V. Richter, Eugene Kogan, Issai Shlimak, Amos Sharoni, Doron Naveh, L. Wolfson, Moshe Kaveh, Andrey Butenko, A. Haran, E. Zion, Yu. Kaganovskii
Publikováno v:
Future Trends in Microelectronics: Journey into the Unknown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bad3e04a285b69b1b0799433e6a3eda2
https://doi.org/10.1002/9781119069225.ch2-9
https://doi.org/10.1002/9781119069225.ch2-9
Publikováno v:
Physics of the Solid State. 54:2201-2204
The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b07fe65394b7af7476c484c19e430d9
https://doi.org/10.1134/s1063783412110285
https://doi.org/10.1134/s1063783412110285