Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Isra Mahaboob"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 581-588 (2019)
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode. In this configuration, p-GaN body-diode-based back-gate c
Externí odkaz:
https://doaj.org/article/d9b2a485f82144329c8cea92cf47059b
Autor:
Ronald Green, B. McEwen, Kasey Hogan, Aivars J. Lelis, Vincent Meyers, V. Kaushik, F. Nouketcha, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, T. Murray, Emma Rocco
Publikováno v:
Journal of Electronic Materials. 50:80-84
In this work, the effects of post-deposition annealing in forming gas ambient on the structure of the Al2O3/GaN interface are investigated. Using capacitance–voltage (C–V) and conductance–frequency (G–f) measurements, the quality of Al2O3/GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4043236b05c1382db5cf1f9422b73507
https://doi.org/10.1007/s11664-020-08532-w
https://doi.org/10.1007/s11664-020-08532-w
Publikováno v:
IEEE Transactions on Electron Devices. 67:3983-3987
Integration of body-diode-based back-gate control in AlGaN/GaN high-electron mobility transistors (HEMTs) was recently demonstrated by the authors to enable dynamic control of the device characteristics. Here, we present an experimental study of drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636b40b9b2f7b550f0bd0def8f179baf
https://doi.org/10.1109/ted.2020.3001920
https://doi.org/10.1109/ted.2020.3001920
Autor:
Emma Rocco, Kasey Hogan, Vincent Meyers, B. McEwen, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, Sean Tozier
Publikováno v:
Journal of Electronic Materials. 49:3481-3489
A non-thermal method for removal of surface damage created by dry etching has previously been documented or n-GaN, but no such effort has been reported for p-GaN. In this study, Ga-polar p-GaN films were subjected to inductively coupled plasma reacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::698f1fd39f6ae7c23c67bad0fb57e9c0
https://doi.org/10.1007/s11664-020-07986-2
https://doi.org/10.1007/s11664-020-07986-2
Autor:
Emma Rocco, Fatemeh Shahedipour-Sandvik, J. Andres Melendez, Roger J Reinertsen, Benjamin McEwen, Kasey Hogan, Isra Mahaboob, Nathaniel C. Cady
Publikováno v:
Exp Biol Med (Maywood)
The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3d8f20ae4899e798b11fc4c9a9ca1d2
https://pubmed.ncbi.nlm.nih.gov/33203229
https://pubmed.ncbi.nlm.nih.gov/33203229
Autor:
Vincent Meyers, Michael A. Reshchikov, Kasey Hogan, Fatemeh Shahedipour-Sandvik, Baishakhi Mazumder, Steven W. Novak, Sean Tozier, Benjamin McEwen, L. Douglas Bell, Isra Mahaboob, Emma Rocco, Olivia Licata
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69a45b6d93586d9d555b68edc778d8a0
https://doi.org/10.1038/s41598-020-58275-1
https://doi.org/10.1038/s41598-020-58275-1
Autor:
Kasey Hogan, Jonathan Marini, Fatemeh Shahedipour-Sandvik, Nathan Lazarus, Emma Rocco, Randy P. Tompkins, Isra Mahaboob
Publikováno v:
Journal of Electronic Materials. 47:6625-6634
We report on the selective area epitaxy (SAE) of AlGaN/GaN microstructures in stretchable geometric patterns. We have investigated dependence of Al incorporation, lateral/sidewall growth profile and electrical properties of SAE heterostructures on Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d3210db272b844682d2af671590373
https://doi.org/10.1007/s11664-018-6576-z
https://doi.org/10.1007/s11664-018-6576-z
Publikováno v:
Solid-State Electronics. 136:36-42
Many biological materials are naturally soft and stretchable, far more so than crystalline semiconductors. Creating systems that can be placed directly on a surface such as human skin has required new approaches in electronic device design and materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c5f0185e4a79c6dc62f52c7cb3359d
https://doi.org/10.1016/j.sse.2017.06.014
https://doi.org/10.1016/j.sse.2017.06.014
Autor:
Kasey Hogan, L. D. Bell, Steve Novak, Fatemeh Shahedipour-Sandvik, Isra Mahaboob, Jonathan Marini
Publikováno v:
Journal of Electronic Materials. 46:5820-5826
We report on the effect of growth polarity and pulsed or $$\delta $$ -doped growth mode on impurity incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar orientation, up to 12× enhancement in Mg concentration for given Mg fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d908ff09b2a84e983880769070a878b
https://doi.org/10.1007/s11664-017-5602-x
https://doi.org/10.1007/s11664-017-5602-x
Autor:
Vincent Meyers, L. D. Bell, Emma Rocco, Kasey Hogan, Isra Mahaboob, Baishakhi Mazumder, B. McEwen, Fatemah Shadi Shahedipour-Sandvik, Steven W. Novak, Sean Tozier
Publikováno v:
Gallium Nitride Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744b37dcc852529829dcda7562e15941
https://doi.org/10.1117/12.2510035
https://doi.org/10.1117/12.2510035