Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Ismailov, T. A."'
Electron Raman scattering (ERS) is investigated in a parabolic semiconductor quantum wire in a transverse magnetic field neglecting by phonon-assisted transitions. The ERS cross-section is calculated as a function of a frequency shift and magnetic fi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411416
The nature of the chemical interaction and glass formation in the system was studied by the methods of physicochemical analysis: differential thermal analysis (DTA), X-ray phase analysis (XRD), microstructural analysis (MSA), as well as by determinin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0043ad31dc35868751041c19b0f6bd4d
Autor:
Kenzhaev, Z. T., Zikrillaev, N. F., Ayupov, K. S., Ismailov, K. A., Koveshnikov, S. V., Ismailov, T. B.
Publikováno v:
Surface Engineering & Applied Electrochemistry; Dec2023, Vol. 59 Issue 6, p858-866, 9p
Autor:
Ismailov, T.
Publikováno v:
Perspectives of Higher Education Development / Oliy Ta'lim Taraqqiyoti Istiqbollari; 2022, Issue 12, p32-46, 15p
Autor:
Andrey Zahariev, Marinova K, Petko Angelov, Aneliya Radulova, Aleksandrina Aleksandrova, Galina Zaharieva, Ismailov T, Stoyan Prodanov, Pavlova M
Publikováno v:
SSRN Electronic Journal.
A study of the international experience of applicable policies for crisis management in the credit system in bank insolvency, identifies three types of solutions, including: elimination of the "toxic element" in the banking system following the examp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e29147eeb4c3efec82e668e1aed6aeb
https://doi.org/10.2139/ssrn.3688961
https://doi.org/10.2139/ssrn.3688961
Akademický článek
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Publikováno v:
Biomedical Engineering; Sep2021, Vol. 55 Issue 3, p219-223, 5p
Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication.
Publikováno v:
Glass & Ceramics. Sep2017, Vol. 74 Issue 5/6, p169-171. 3p.
Publikováno v:
Biomedical Engineering; Nov2020, Vol. 54 Issue 4, p240-243, 4p
Publikováno v:
Russian Microelectronics; 2020, Vol. 49 Issue 6, p385-388, 4p