Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ismail T. Emesh"'
Publikováno v:
Applied Surface Science. 384:294-297
In-situ X-ray photoelectron spectroscopy (XPS) studies reveal that plasma cleaning of air-exposed Co or Cu transition metal surfaces results in the formation of a remnant C film 1–3 monolayers thick, which is not reduced upon extensive further plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a13d83a57e0767337ece7c55cf98b2b
https://doi.org/10.1016/j.apsusc.2016.05.082
https://doi.org/10.1016/j.apsusc.2016.05.082
Publikováno v:
ECS Transactions. 2:417-425
A novel Electrochemical Mechanical Planarization (eCMP) process was developed and integrated on the copper plating platform to meet the stringent technical requirements including higher planarization efficiency, higher throughput at lower down force
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2efe9d7172bfad1d2b37aadfb65f63d
https://doi.org/10.1149/1.2408895
https://doi.org/10.1149/1.2408895
Autor:
Joseph F. Aubuchon, Paul F. Ma, Yuchun Wang, Niranjan Kumar, Arvind Sundarrajan, You Wang, Mehul Naik, Qian Luo, Jiang Lu, Motoya Okazaki, Yufei Chen, Murali Narasimhan, Jennifer Tseng, Ismail T. Emesh
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
Physical vapor deposited (PVD) Cu seed layers have been successfully implemented for Cu gap-fill in feature sizes for the 2x nm flash devices. By tuning the incident angle of the incoming flux of Cu ions as well as utilizing the resputtering paramete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b53813c08dfc9ec5d767b9f42701bfc3
https://doi.org/10.1109/iitc.2009.5090334
https://doi.org/10.1109/iitc.2009.5090334
Copper films have been deposited by low-pressure (1–20 mTorr) chemical vapour deposition using Cu1+ (hexafluoroacetylacetonate) trimethylvinylsilane onto SiO2 patterned substrates having seed layers of W, TiN and Al. Blanket deposition is observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f00736221ece1138e76edb2cec3c98cf
https://nrc-publications.canada.ca/eng/view/object/?id=83c6c3e9-4187-4ab1-a3c2-4a883a67fa19
https://nrc-publications.canada.ca/eng/view/object/?id=83c6c3e9-4187-4ab1-a3c2-4a883a67fa19
Publikováno v:
ChemInform. 21
This paper presents a study on plasma‐assisted chemical vapor deposition of silicon dioxide films using tetraethylorthosilicate (TEOS). It was found that when oxygen is utilized as an oxidant, the resulting film contained approximately 1 atom perce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bff0b815e37a48bb83364e67979d13a
https://doi.org/10.1002/chin.199009028
https://doi.org/10.1002/chin.199009028
Publikováno v:
Journal of The Electrochemical Society. 136:3404-3408
This paper presents a study on plasma‐assisted chemical vapor deposition of silicon dioxide films using tetraethylorthosilicate (TEOS). It was found that when oxygen is utilized as an oxidant, the resulting film contained approximately 1 atom perce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1fc2efdc1e0d3de9841d37db6be298
https://doi.org/10.1149/1.2096461
https://doi.org/10.1149/1.2096461