Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Ismail Kashkoush"'
Autor:
Ahmed Ismail Kashkoush, Tamia Potter, Jordan C. Petitt, Song Hu, Kyle Hunter, Michael L. Kelly
Publikováno v:
Journal of neurosurgery.
OBJECTIVE Severe traumatic brain injury (TBI) is associated with intracranial hypertension (ICHTN). The Rotterdam CT score (RS) can predict clinical outcomes following TBI, but the relationship between the RS and ICHTN is unknown. The purpose of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e38090f1deec360f15f5c7bffca75af
https://pubmed.ncbi.nlm.nih.gov/35962965
https://pubmed.ncbi.nlm.nih.gov/35962965
UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
We experimentally proved an effective use of UV-ozone oxide layer in junction passivation and current tunneling applications of crystalline silicon (c-Si) solar cells. The UV-ozone generated oxide layer can improve the passivation quality of aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8494fe220ece4950da41b320f5329c
https://doi.org/10.1109/pvsc43889.2021.9518666
https://doi.org/10.1109/pvsc43889.2021.9518666
Publikováno v:
ECS Transactions. 92:117-123
Introduction Wafer drying is the last and critical step in wet wafer surface preparation processes for a product finished with clean and dry surfaces (1). Among various wafer drying technologies, Marangoni drying has been the most commonly used appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd36c6213185915d34926e4e270d23c1
https://doi.org/10.1149/09202.0117ecst
https://doi.org/10.1149/09202.0117ecst
Publikováno v:
2020 China Semiconductor Technology International Conference (CSTIC).
The effect of in-situ process cleaning before epitaxial deposition was studied. The process includes using dissolved ozone to remove organics from the wafers' surface. In addition, the process was conducted in-situ without transferring the wafers fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0cd7797b5bbdf101e435ce0f3a4834f
https://doi.org/10.1109/cstic49141.2020.9282493
https://doi.org/10.1109/cstic49141.2020.9282493
Publikováno v:
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
As electronic devices are evolving to more diversified and specifically function-oriented applications, silicon-based semiconductors have shown their limitation to unprecedented functionality requirements such as high power, high frequency, and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70e90c8849ec49005b2b7cd3543f7942
https://doi.org/10.1109/sslchinaifws49075.2019.9019762
https://doi.org/10.1109/sslchinaifws49075.2019.9019762
Publikováno v:
2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In conventional MEMS fabrication, relatively inert compounds such as Si 3 N 4 are used as an etch stop or mask for creating patterns on wafers. However, materials such as this require insight as to their etch selectivity corresponding to that of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::813f381a95dc669f2583e64ebdfc3212
https://doi.org/10.1109/sslchinaifws49075.2019.9019782
https://doi.org/10.1109/sslchinaifws49075.2019.9019782
Autor:
Sara Bakhshi, Ngwe Zin, Kristopher O. Davis, Marshall Wilson, Winston V. Schoenfeld, Ismail Kashkoush
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
It is long recognized that the effective surface clean is critical for the increased performance of solar cell and semiconductor devices. In this contribution, we introduced the effectiveness of crystalline silicon surface clean by a simple ultraviol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaee20f284e09e5d0cb1313d039abcb0
https://doi.org/10.1109/pvsc.2018.8548304
https://doi.org/10.1109/pvsc.2018.8548304
Autor:
Marshall Wilson, Kristopher O. Davis, Ngwe Zin, Winston V. Schoenfeld, Sara Bakhshi, Ismail Kashkoush
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Passivation quality of silicon nitride (SiNx), aluminum oxide (AlOx) and a stack of AlOx/SiNx has been investigated in the presence and absence of a thin silicon oxide (SiOx) layer formed using ozonated deionized water. Lifetime measurements show $\a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a73c26bde86c508d00626cea18e4df
https://doi.org/10.1109/pvsc.2017.8366153
https://doi.org/10.1109/pvsc.2017.8366153
Publikováno v:
Solid State Phenomena. 219:73-77
Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c84ac0ebc9cc30cc49f07950ff09dadb
https://doi.org/10.4028/www.scientific.net/ssp.219.73
https://doi.org/10.4028/www.scientific.net/ssp.219.73
Publikováno v:
Solid State Phenomena. 195:297-300
The semiconductor industry considers wet cleans to be critical surface preparation steps. The Si/SiO2 interface, for example, is very critical to achieve high gate oxide integrity and avoid leakage or stacking faults. Similarly, the solar industry ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ec96f33616def2b815348d9c4be75e
https://doi.org/10.4028/www.scientific.net/ssp.195.297
https://doi.org/10.4028/www.scientific.net/ssp.195.297