High-quality AlN growth: a detailed study on ammonia flow

Autor: Gamze Yolcu, Merve Nur Koçak, Dudu Hatice Ünal, Ismail Altuntas, Sabit Horoz, Ilkay Demir

Publikováno v: Journal of Materials Science: Materials in Electronics. 34

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::203e9ccef82f519a91986180f113e59b
https://doi.org/10.1007/s10854-022-09556-0

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Autor: Ismail Altuntas

Publikováno v: Cumhuriyet Science Journal, Vol 42, Iss 1, Pp 184-190 (2021)
Volume: 42, Issue: 1 184-190
Cumhuriyet Science Journal

The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d1d23075c29eda25005d69e2c6fb8fe
https://doi.org/10.17776/csj.858546

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Autor: Marwa Ben Arbia, Badreddine Smiri, Ilkay Demir, Faouzi Saidi, Ismail Altuntas, Fredj Hassen, Hassen Maaref

Publikováno v: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2022, 140, pp.106411. ⟨10.1016/j.mssp.2021.106411⟩

The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for Infrared optoelectronic d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36c8bd581cf875088c4b05f87c39dafd
https://hdl.handle.net/20.500.12418/13847

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Autor: Kağan Pürlü, Ismail Altuntas, Irem Simsek, MerveNur Koçak, Ilkay Demir, Gamze Yolcu

AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects on the quality of the AlN e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17f31bffa70fba96674ddf7887db0a81
https://hdl.handle.net/20.500.12418/12874

Optical and nano-mechanical characterization of c-axis oriented AlN film

Autor: Padmalochan Panda, Ramaseshan Rajagopalan, S. Tripursundari, Ismail Altuntas, Ilkay Demir

Publikováno v: Optical Materials. 129:112480

This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. The crystal structure and t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ab172a1bcb38f5270fa5b0bc7f44166
https://doi.org/10.1016/j.optmat.2022.112480