Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Islamov, Damir R."'
Autor:
Islamov, Damir R.
Publikováno v:
Известия Саратовского университета. Новая серия. Серия: История. Международные отношения, Vol 22, Iss 4, Pp 515-521 (2022)
The article deals with the peculiarities of the development of the Montenegrin state-building and Montenegro’s prospects for the European integration after the referendum in 2006. In the wake of the demise of the SFRY and the occurrence of new sove
Externí odkaz:
https://doaj.org/article/f3523b8292b54a2c973a7c9bee980f40
Autor:
Islamov, Damir R., Gritsenkoa, Vladimir A., Perevalov, Timofey V., Pustovarov, Vladimir A., Orlov, Oleg M., Chernikova, Anna G., Markeev, Andrey M., Slesazeck, Stefan, Schröder, Uwe, Mikolajick, Thomas, Krasnikov, Gennadiy Ya.
The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81148
https://tud.qucosa.de/api/qucosa%3A81148/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A81148/attachment/ATT-0/
Autor:
Zalyalov, Timur M., Islamov, Damir R.
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows improving thei
Externí odkaz:
http://arxiv.org/abs/2212.10858
Autor:
Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Orlov, Oleg M., Krasnikov, Gennady Ya.
Publikováno v:
Appl. Phys. Lett. 109 (2016) 052901
The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV, $W_\mathrm{opt}=3.2$ eV, re
Externí odkaz:
http://arxiv.org/abs/1604.03353
Autor:
Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Aliev, Vladimir Sh., Nadolinny, Vladimir A., Chin, Albert
Publikováno v:
In Materialia March 2021 15
Autor:
Islamov, Damir R., Gritsenko, Vladimir A., Perevalov, Timofey V., Yelisseyev, Alexander P., Pustovarov, Vladimir A., Korolkov, Ilya V., Lomonova, Elena E.
Publikováno v:
In Materialia March 2021 15
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Origin of defects responsible for charge transport in resistive random access memory based on hafnia
Autor:
Islamov, Damir R., Perevalov, T. V., Gritsenkov, V. A., Aliev, V. Sh., Saraev, A. A., Kaichev, V. V., Ivanova, E. V., Zamoryanskaya, M. V., Cheng, C. H., Chin, Albert
A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based o
Externí odkaz:
http://arxiv.org/abs/1309.0071
Publikováno v:
In Physics Reports 15 February 2016 613:1-20