Zobrazeno 1 - 10
of 1 016
pro vyhledávání: '"Islam, M. Saif"'
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while the nanostr
Externí odkaz:
http://arxiv.org/abs/2405.05972
Autor:
Qarony, Wayesh, Mayet, Ahmed S., Devine, Ekaterina Ponizovskaya, Ghandiparsi, Soroush, Bartolo-Perez, Cesar, Ahamed, Ahasan, Rawat, Amita, Mamtaz, Hasina H., Yamada, Toshishige, Wang, Shih-Yuan, Islam, M. Saif
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trapping surface
Externí odkaz:
http://arxiv.org/abs/2306.05170
Autor:
Devine, E. Ponizovskaya, Ahamad, Ahasan, Mayet, Ahmed, Rawat, Amita, Elrefaie, Aly F, Yamada, Toshishige, Wang, Shih-Yuan, Islam, M Saif
We study the nano- and micro-structures that increase the optical efficiency of the CMOS image pixels in visible and infrared. We consider the difference between the micro-holes at the pixels' bottom and the top and the holes that are composed of sma
Externí odkaz:
http://arxiv.org/abs/2305.02314
Autor:
Ponizovskaya-Devine, Ekaterina, Mayet, Ahmed S., Rawat, Amita, Ahamed, Ahasan, Wang, Shih-Yuan, Elrefaie, Aly F., Yamada, Toshishige, Islam, M. Saif
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical efficiency an
Externí odkaz:
http://arxiv.org/abs/2209.14242
Autor:
Ahamed, Ahasan, Bartolo-Perez, Cesar, Mayet, Ahmed Sulaiman, Ghandiparsi, Soroush, Arino-Estrada, Gerard, Zhou, Xiangnan, Bec, Julien, Wang, Shih-Yuan, Marcu, Laura, Islam, M. Saif
Controlling light penetration depth in Avalanche Photodiodes (APDs) and Single Photon Avalanche Diodes (SPADs) play a major role in achieving high multiplication gain by delivering light near the multiplication region where the electric field is the
Externí odkaz:
http://arxiv.org/abs/2201.07939
Autor:
Ahamed, Ahasan, Bartolo-Perez, Cesar, Mayet, Ahmed Sulaiman, Ghandiparsi, Soroush, McPhillips, Lisa, Wang, Shih-Yuan, Islam, M. Saif
Optical spectrometers are widely used scientific equipment with many applications involving material characterization, chemical analysis, disease diagnostics, surveillance, etc. Emerging applications in biomedical and communication fields have booste
Externí odkaz:
http://arxiv.org/abs/2201.06149
Autor:
Devine, E. Ponizovskaya, Ahamed, Ahasan, Mayet, Ahmed S., Ghandiparsi, Soroush, Bartolo-Perez, Cesar, McPhillips, Lisa, Elrefaie, Aly F., Yamada, Toshishige, Wang, Shih-Yuan, Islam, M Saif
The optimization of silicon photodiode-based CMOS sensors with backside-illumination for 300-1000 nm wavelength range was studied. It was demonstrated that a single hole on a photodiode increases the optical efficiency of the pixel in near-infrared w
Externí odkaz:
http://arxiv.org/abs/2110.00206
Autor:
Bartolo-Perez, Cesar, Ghandiparsi, Soroush, Mayet, Ahmed S., Cansizoglu, Hilal, Gao, Yang, Qarony, Wayesh, Ahamed, Ahasan, Wang, Shih-Yuan, Cherry, Simon R., Islam, M. Saif, Arino-Estrada, Gerard
Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we
Externí odkaz:
http://arxiv.org/abs/2104.12981
Autor:
Bartolo-Perez, Cesar, Qarony, Wayesh, Ghandiparsi, Soroush, Mayet, Ahmed S., Ahamed, Ahasan, Cansizoglu, Hilal, Gao, Yang, Devine, Ekaterina Ponizovskaya, Yamada, Toshishige, Elrefaie, Aly F, Wang, Shih-Yuan, Islam, M. Saif
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical imaging. Howe
Externí odkaz:
http://arxiv.org/abs/2012.11831
Autor:
Devine, E. Ponizovskaya, Qarony, Wayesh, Ahamed, Ahasan, Mayet, Ahmed S, Ghandiparsi, Soroush, Bartolo-Perez, Cesar, Elrefaie, Aly F, Yamada, Toshishige, Wang, Shih-Yuan, Islam, M. Saif
Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhance
Externí odkaz:
http://arxiv.org/abs/2011.10624