Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Isik C. Kizilyalli"'
Publikováno v:
Power Systems ISBN: 9783031265716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68fb600bb834829cd64820da2d036bb
https://doi.org/10.1007/978-3-031-26572-3_18
https://doi.org/10.1007/978-3-031-26572-3_18
Publikováno v:
Power Systems ISBN: 9783031265716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e61dd257b87dd34bfc8b5a153363ec6
https://doi.org/10.1007/978-3-031-26572-3_1
https://doi.org/10.1007/978-3-031-26572-3_1
Publikováno v:
Power Systems ISBN: 9783031265716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992b63586ec00f15a445d39477368d52
https://doi.org/10.1007/978-3-031-26572-3_20
https://doi.org/10.1007/978-3-031-26572-3_20
Publikováno v:
IEEE Journal of Photovoltaics. 10:213-218
The emergence of electrical conversion technologies utilizing silicon carbide and gallium nitride switches and diodes will enable the development of a whole new class of efficient, lightweight, and reliable power electronics based on wide band gap se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49dc413d95c0de1ff4f90a2f9a799f18
https://doi.org/10.1109/jphotov.2019.2950592
https://doi.org/10.1109/jphotov.2019.2950592
Publikováno v:
ECS Meeting Abstracts. :1344-1344
Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c571657b8faf6874338390150ad1ac25
https://doi.org/10.1149/ma2022-02371344mtgabs
https://doi.org/10.1149/ma2022-02371344mtgabs
The lack of effective DC fault protection technology remains a major barrier for the DC paradigm shift. In addressing the key challenges, Direct Current Fault Protection: Basic Concepts and Technology Advances starts with an introduction to the adv
Publikováno v:
ECS Transactions. 86:3-16
Wide-bandgap power semiconductor devices offer enormous improvements in energy efficiency gains for a wide range of applications in an ever increasingly electrified world. Fast switching power semiconductor devices are key to increasing the efficienc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26c5619c9d07c2daa7eb320d02e9c47
https://doi.org/10.1149/08612.0003ecst
https://doi.org/10.1149/08612.0003ecst
Publikováno v:
Materials Science Forum. 924:799-804
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab78c22a6adf43ccf0f9aeed28883450
https://doi.org/10.4028/www.scientific.net/msf.924.799
https://doi.org/10.4028/www.scientific.net/msf.924.799
Publikováno v:
ECS Transactions. 75:3-9
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, gallium nitride (GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aee623f074c47d764d80bc41dc59fbd
https://doi.org/10.1149/07512.0003ecst
https://doi.org/10.1149/07512.0003ecst
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c280cc6cd18adab26f000ac26701ae3a
https://doi.org/10.1109/iedm.2018.8614501
https://doi.org/10.1109/iedm.2018.8614501