Zobrazeno 1 - 10
of 234
pro vyhledávání: '"Ishwara B. Bhat"'
Autor:
Fawen Guo, Zonghuan Lu, Dibyajyoti Mohanty, Tianmeng Wang, Ishwara B. Bhat, Shengbai Zhang, Sufei Shi, Morris A. Washington, Gwo-Ching Wang, Toh-Ming Lu
Publikováno v:
Materials Research Letters, Vol 5, Iss 8, Pp 540-546 (2017)
A two-step process for synthesizing stable Cs2SnI6 perovskite thin films is reported in this letter. The two-step process includes the co-evaporation of two precursors SnI2 and CsI onto a glass substrate, followed by a post thermal annealing process
Externí odkaz:
https://doaj.org/article/bf72881a04804d7282f7996dca201ad6
Publikováno v:
Materials Science Forum. 1004:614-619
We have characterized gate capacitive and conductive behaviors of commercial Si and 4H-SiC vertical MOSFETs that have never been reported previously. The characteristics and possible physical reasons are determined and corroborated with device simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6463cefab9874b865533f46bc023610
https://doi.org/10.4028/www.scientific.net/msf.1004.614
https://doi.org/10.4028/www.scientific.net/msf.1004.614
Autor:
Xiang Zhou, Collin Hitchcock, T. Paul Chow, Ishwara B. Bhat, Jacob Kupernik, Rajendra Dahal, Gyanesh Pandey
Publikováno v:
Materials Science Forum. 1004:595-600
We have determined, using the Conductance-Frequency (G-ω) Technique, the creation and annihilation process of the 3 interface trap levels (OX, OX’ and NI levels) previously reported [1-3] and their possible correlation to inversion electron trappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b369c70822c31fcf97561c11cb9a786b
https://doi.org/10.4028/www.scientific.net/msf.1004.595
https://doi.org/10.4028/www.scientific.net/msf.1004.595
Autor:
Xixing Wen, Xin Sun, Morris Washington, Zonghuan Lu, Toh-Ming Lu, Gwo-Ching Wang, Yu Xiang, Jian Shi, Ishwara B. Bhat, Zhizhong Chen
Publikováno v:
ACS Applied Energy Materials. 3:4589-4599
Most high-quality CdTe thin films are epitaxially grown on single-crystalline substrates through chemical bondings by either molecular beam epitaxy or metalorganic chemical vapor deposition. The ep...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3970e315a8f432d68861cd9f4c0379
https://doi.org/10.1021/acsaem.0c00265
https://doi.org/10.1021/acsaem.0c00265
Autor:
Kim Kisslinger, Ishwara B. Bhat, Zonghuan Lu, Yu Xiang, Dibyajyoti Mohanty, Jian Shi, Morris Washington, Toh-Ming Lu, Lihua Zhang, Gwo-Ching Wang, Lei Gao, Xin Sun
Publikováno v:
Carbon. 144:519-524
Traditionally, a high-quality CdTe film can only be grown on a single crystal substrate with a small lattice mismatch. Herein, we report the epitaxy of CdTe films on monolayer single crystal graphene buffered amorphous SiO2/Si(100) substrates, despit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71d0545ccaf2cb55f8060fb0f64b1a4
https://doi.org/10.1016/j.carbon.2018.12.094
https://doi.org/10.1016/j.carbon.2018.12.094
Autor:
Zonghuan Lu, Gwo-Ching Wang, Fawen Guo, Dibyajyoti Mohanty, Y. B. Yang, Toh-Ming Lu, Yu Xiang, Xin Sun, Morris Washington, Ishwara B. Bhat
Publikováno v:
Applied Surface Science. 435:759-768
Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334a8bb9b8560c1204faf78a63b4376d
https://doi.org/10.1016/j.apsusc.2017.11.098
https://doi.org/10.1016/j.apsusc.2017.11.098
Autor:
Weiyu Xie, Dibyajyoti Mohanty, Yiping Wang, Gwo-Ching Wang, Jian Shi, Ishwara B. Bhat, Y. B. Yang, Lucas J. Seewald, Lihua Zhang, Shengbai Zhang, Kim Kisslinger, Toh-Ming Lu
Publikováno v:
Applied Surface Science. 413:219-232
Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512eb061c45c550378d3a957377cdae8
https://doi.org/10.1016/j.apsusc.2017.03.260
https://doi.org/10.1016/j.apsusc.2017.03.260
Autor:
Dibyajyoti Mohanty, Su-Fei Shi, Fawen Guo, Toh-Ming Lu, Morris Washington, Zonghuan Lu, Gwo-Ching Wang, Tianmeng Wang, Ishwara B. Bhat, Shengbai Zhang
Publikováno v:
Materials Research Letters, Vol 5, Iss 8, Pp 540-546 (2017)
A two-step process for synthesizing stable Cs2SnI6 perovskite thin films is reported in this letter. The two-step process includes the co-evaporation of two precursors SnI2 and CsI onto a glass substrate, followed by a post thermal annealing process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba801ec3874c92852cb43f2b59844133
https://doi.org/10.1080/21663831.2017.1346525
https://doi.org/10.1080/21663831.2017.1346525
Publikováno v:
IEEE Transactions on Electron Devices. 64:897-900
This paper presents current-controlled negative resistance (CCNR) phenomena observed in ultrahigh voltage (BV $\geq $ 10 kV) 4H silicon carbide implanted anode p-i-n rectifiers. CCNR under forward bias is believed to be caused by the presence of a th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d664f6cb0e73ef93c3e9193507575e
https://doi.org/10.1109/ted.2016.2633463
https://doi.org/10.1109/ted.2016.2633463
Autor:
Sauvik Chowdhury, Ishwara B. Bhat, Rajendra Dahal, Zachary Stum, Collin Hitchcock, T. Paul Chow
Publikováno v:
IEEE Transactions on Electron Devices. 64:888-896
Bidirectional power transistors are essential components of several power electronics systems, such as matrix converters. In this paper, we present the operating principles, design considerations, and experimental characteristics of a novel planar ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9147543afca593a862032449e8baa5a2
https://doi.org/10.1109/ted.2016.2631241
https://doi.org/10.1109/ted.2016.2631241