Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Ishtiaq Ahsan"'
Autor:
Riduan Khaddam-Aljameh, Milos Stanisavljevic, Jordi Fornt Mas, Geethan Karunaratne, Matthias Brandli, Feng Liu, Abhairaj Singh, Silvia M. Muller, Urs Egger, Anastasios Petropoulos, Theodore Antonakopoulos, Kevin Brew, Samuel Choi, Injo Ok, Fee Li Lie, Nicole Saulnier, Victor Chan, Ishtiaq Ahsan, Vijay Narayanan, S. R. Nandakumar, Manuel Le Gallo, Pier Andrea Francese, Abu Sebastian, Evangelos Eleftheriou
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:1027-1038
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cbb21e8fda36556412530fc9860519e
https://doi.org/10.1109/jssc.2022.3140414
https://doi.org/10.1109/jssc.2022.3140414
Autor:
I. Ok, Samuel S. Choi, Riduan Khaddam-Aljameh, Scott C. Lewis, Charles Mackin, Wilfried Haensch, Kevin W. Brew, Victor Chan, F. Lie, Alexander Friz, Stefano Ambrogio, Marc A. Bergendahl, James J. Demarest, Geoffrey W. Burr, Akiyo Nomura, Atsuya Okazaki, Katie Spoon, Takeo Yasuda, Masatoshi Ishii, Nicole Saulnier, Ishtiaq Ahsan, Pritish Narayanan, Hsinyu Tsai, Vijay Narayanan, Hiroyuki Mori, Y. Kohda, Kohji Hosokawa
Publikováno v:
IEEE Transactions on Electron Devices. 68:6629-6636
Hardware acceleration of deep learning using analog non-volatile memory (NVM) requires large arrays with high device yield, high accuracy Multiply-ACcumulate (MAC) operations, and routing frameworks for implementing arbitrary deep neural network (DNN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8d47a1ee53bb906bdde9b10caecdc5a
https://doi.org/10.1109/ted.2021.3115993
https://doi.org/10.1109/ted.2021.3115993
Autor:
Milos Stanisavljevic, Nicole Saulnier, J. Fornt Mas, S. Choi, U. Egger, Pier Andrea Francese, Fei Liu, Geethan Karunaratne, S. M. Muller, S. R. Nandakumar, Victor Chan, Kevin W. Brew, Vijay Narayanan, Fee Li Lie, Evangelos Eleftheriou, A. Singh, Ishtiaq Ahsan, Riduan Khaddam-Aljameh, Anastasios Petropoulos, Ok Injo, Theodore Antonakopoulos, Matthias Braendli, Abu Sebastian, M. Le Gallo
Publikováno v:
VLSI Circuits
Scopus-Elsevier
Scopus-Elsevier
We present a 256×256 in-memory compute (IMC) core designed and fabricated in 14nm CMOS with backend-integrated multi-level phase-change memory (PCM). It comprises 256 linearized current controlled oscillator (CCO)-based ADCs at a compact 4µm pitch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7eb7dcd69b9c8cfb0f8461b1464c516e
https://doi.org/10.23919/vlsicircuits52068.2021.9492362
https://doi.org/10.23919/vlsicircuits52068.2021.9492362
Autor:
Ishtiaq Ahsan, Arthur Gasasira, Vijay Narayanan, Soon-Cheon Seo, Xuefeng Liu, Veenadhar Katragadda, Takashi Ando, Nicole Saulnier, Youngseok Kim, Ruturaj Pujari, Dexin Kong, Sean Teehan
Publikováno v:
2021 32nd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper we demonstrate a novel methodology to electrically test and characterize resistive random-access memory (RRAM) single bit devices for deep learning application. We extract critical device performance metrics for validating and optimizin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d6b6e5e454cc3929b87f5dd640f81c5
https://doi.org/10.1109/asmc51741.2021.9435708
https://doi.org/10.1109/asmc51741.2021.9435708
Autor:
Kangguo Cheng, Soon-Cheon Seo, James Chingwei Li, Ishtiaq Ahsan, A. J. Varghese, Dexin Kong, Nicole Saulnier, Vijay Narayanan, T. Ando, Robert R. Robison, Ramachandran Muralidhar, C. Robinson, Youngseok Kim
Publikováno v:
International Symposium for Testing and Failure Analysis.
The continuously growing demands in high-density memories drive the rapid development of advanced memory technologies. In this work, we investigate the HfOx-based resistive switching memory (ReRAM) stack structure at nanoscale by high resolution TEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f458bbc115e136245ffda8be1bb98d2
https://doi.org/10.31399/asm.cp.istfa2020p0053
https://doi.org/10.31399/asm.cp.istfa2020p0053
Autor:
Daniel Schmidt, Igor Turovets, Veeraraghavan S. Basker, Andrew M. Greene, Frougier Julien, Mary Breton, Aron Cepler, Marjorie Cheng, Dexin Kong, Nicolas Loubet, Mark Klare, Roy Koret, Jingyun Zhang, Abraham Arceo de la Pena, Ishtiaq Ahsan
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
The methodology of measuring the lateral etch, or indentation, of SiGe nanosheets by using optical scatterometry, x-ray fluorescence, and machine learning algorithms is presented and discussed. Stacked nanosheet device structures were fabricated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3f7a2fb31f627b7d8b01b43a56fe6d4
https://doi.org/10.1109/asmc49169.2020.9185226
https://doi.org/10.1109/asmc49169.2020.9185226
Autor:
Jennifer Church, Marjorie Cheng, Luciana Meli, John R. Sporre, Mary Breton, Igor Turovets, Chi-Chun Liu, Cody Murray, Nelson Felix, Dexin Kong, Eric R. Miller, Ishtiaq Ahsan, Roy Koret, Aron Cepler, Daniel Schmidt
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
A methodology of obtaining the local critical dimension uniformity of contact hole arrays by using optical scatterometry in conjunction with machine learning algorithms is presented and discussed. Staggered contact hole arrays at 44 nm pitch were cre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46c75a6f61127c8ec20ba2b373bf2ad
https://doi.org/10.1117/12.2551498
https://doi.org/10.1117/12.2551498
Autor:
Xiaoyuan Qi, Raymond J. Rosner, John Hopkins, Jack M. Higman, Rick Mewhirter, Aaron Sinnott, Binod Kumar G. Nair, Ishtiaq Ahsan, Mark Lagus
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:2494-2503
A simplified yield model for static random access memory (SRAM) repair has been proposed. This simplified model provides minimum required redundancy to repair all bit cell failures even at early stage of technology development. First, a negative bino
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2e6c9e3a5c6f97f54efd0939847e31
https://doi.org/10.1109/tvlsi.2018.2858561
https://doi.org/10.1109/tvlsi.2018.2858561
Autor:
Zhigang Song, Tarl Gordon, Teng-Yin Lin, Kan Zhang, Neerja Bawaskar, Steve Crown, Yandong Liu, Martin O'tool, Kannan Sekar, Toni Laaksonen, Daniel Greenslit, Mark Lagus, Ishtiaq Ahsan, Bill Evans, Joerg Winkler, Shahrukh Khan, DK Sohn, Frank Barth, John Masnik
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Functional logic test structures with ATPG blocks and scan chains have been the traditional inline logic learning vehicle for technology learning and development. However, these test structures often need processing of wafers up to a higher BEOL proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af9c6803b34a79dc6e26839fa55284f7
https://doi.org/10.1109/asmc.2019.8791769
https://doi.org/10.1109/asmc.2019.8791769
Autor:
David Clark, Carl Schiller, Stephen Lucarini, Ishtiaq Ahsan, Fred J. Towler, Zhigang Song, Robert C. Wong, Felix Beaudoin
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:474-479
The SRAM bitcell array has been traditionally used as a yield learning vehicle for new technologies. However, the yield of the SRAM bitcell is susceptible to parametric variations and subtle process defects/variations. In this paper, a new functional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f696121311a8e234ef63a4da60c55562
https://doi.org/10.1109/tsm.2015.2487267
https://doi.org/10.1109/tsm.2015.2487267