Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Ishpal Rawal"'
Autor:
Sunil Agrohiya, Sajjan Dahiya, Parveen K. Goyal, Ishpal Rawal, Anil Ohlan, R. Punia, A. S. Maan
Publikováno v:
ECS Sensors Plus, Vol 1, Iss 4, p 043601 (2022)
The current research aims to investigate the effect of nickel doping on the structural and opto-electrical characteristics of zinc oxide thin films. Sol-gel spin coating technique has been utilized to deposit Zn _1-x Ni _x O (x = 0, 0.005, 0.010, and
Externí odkaz:
https://doaj.org/article/9056ff0d832b44fe90d2660ed37bc863
Publikováno v:
ACS Omega, Vol 2, Iss 11, Pp 7515-7524 (2017)
Externí odkaz:
https://doaj.org/article/679f2175b2a84146bc34122c166ea5c6
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:14071-14085
Autor:
Sunil Agrohiya, Vipin Kumar, Ishpal Rawal, Sajjan Dahiya, Parveen K. Goyal, Vinod Kumar, Rajesh Punia
Publikováno v:
Silicon. 14:11891-11901
Autor:
Sunil Agrohiya, Ravinder Singh, Sajjan Dahiya, Ishpal Rawal, Anil Ohlan, R. Punia, A. S. Maan
Publikováno v:
Applied Physics A. 129
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Autor:
Sunil Agrohiya, Sajjan Dahiya, Ishpal Rawal, Parveen Kumar Goyal, Anil Ohlan, Rajesh Punia, A. S. Maan
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Publikováno v:
Iranian Polymer Journal. 31:519-532
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:920-933
Publikováno v:
Silicon. 14:7711-7723
In the present study, we reports the fabrication of n-ZnO/p-Si++ hetero-junction devices for the detection of hydrogen leakage in ambient air environment. For the fabrication of n-ZnO/p-Si++ hetero-junction devices, high quality ZnO thin films are gr