Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ishibashi Tomoatsu"'
Autor:
Ando, Keita, Sakota, Riria, Usui, Hidehisa, Ishibashi, Tomoatsu, Matsuo, Hisanori, Watanabe, Katsuhide
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p258-262, 5p
Autor:
Ishibashi, Tomoatsu, Matsuo, Hisanori, Watanabe, Katsuhide, Sakota, Riria, Usui, Hidehisa, Ando, Keita
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p253-257, 5p
Publikováno v:
In Thin Solid Films 2006 501(1):326-328
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; February 2021, Vol. 314 Issue: 1 p186-191, 6p
Publikováno v:
Thin Solid Films. 501:326-328
Photoresist removal is one of the most important techniques in the fabrication of semiconductor devices. Here, H atoms generated on heated W catalyzer from H2 gas molecules were used for photoresist removal instead of O2-plasma ashing. Resist removal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b203cd2beb0547ebd51275ef1ca8674
https://doi.org/10.1016/j.tsf.2005.07.287
https://doi.org/10.1016/j.tsf.2005.07.287
Autor:
Ono, Naoki, Yamada, Takashi, Miura, Shumpei, Ishibashi, Tomoatsu, Matsuo, Hisanori, Watanabe, Katsuhide
Publikováno v:
ECS Transactions; July 2019, Vol. 92 Issue: 2 p107-116, 10p