Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Ishibashi Naoto"'
Autor:
Fujie, Fumihiro, Shiono, Tsubasa, Murata, Koichi, Ishibashi, Naoto, Mabuchi, Yuichiro, Tsuchida, Hidekazu
Publikováno v:
Journal of Applied Physics; 6/21/2024, Vol. 135 Issue 23, p1-14, 14p
Autor:
Moriwaki Hisataka, Okuno Masataka, Watanabe Makiko, Ishibashi Naoto, Fukaya Yayoi, Sano Tetsuro, Tatsukawa Hideki, Kojima Soichi
Publikováno v:
Molecular Cancer, Vol 10, Iss 1, p 4 (2011)
Abstract Background Hepatocellular carcinoma has a high mortality rate due to its rate of recurrence. Acyclic retinoid prevents recurrence of hepatocellular carcinoma in patients after surgical removal of their primary tumors by inducing apoptosis in
Externí odkaz:
https://doaj.org/article/72a83c37027145b999b3c1bc8a17bb3f
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Qin, Xian-Yang, Suzuki, Harukazu, Honda, Masao, Okada, Hikari, Kaneko, Shuichi, Inoue, Ikuyo, Ebisui, Etsuko, Hashimoto, Kosuke, Carninci, Piero, Kanki, Keita, Tatsukawa, Hideki, Ishibashi, Naoto, Masaki, Takahiro, Matsuura, Tomokazu, Kagechika, Hiroyuki, Toriguchi, Kan, Hatano, Etsuro, Shirakami, Yohei, Shiota, Goshi, Shimizu, Masahito, Moriwaki, Hisataka, Kojima, Soichi
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2018 May 01. 115(19), 4969-4974.
Externí odkaz:
https://www.jstor.org/stable/26509585
Autor:
Meguro, Yoshiyuki, Miyano, Kanako, Hirayama, Shigeto, Yoshida, Yuki, Ishibashi, Naoto, Ogino, Takumi, Fujii, Yuriko, Manabe, Sei, Eto, Moeko, Nonaka, Miki, Fujii, Hideaki, Ueta, Yoichi, Narita, Minoru, Sata, Naohiro, Yada, Toshihiko, Uezono, Yasuhito
Publikováno v:
In Journal of Pharmacological Sciences May 2018 137(1):67-75
Autor:
Komi, Yusuke, Sogabe, Yukihisa, Ishibashi, Naoto, Sato, Yasufumi, Moriwaki, Hisataka, Shimokado, Kentaro, Kojima, Soichi
Publikováno v:
In Laboratory Investigation January 2010 90(1):52-60
Publikováno v:
In European Journal of Pharmacology 2010 643(2):267-273
Autor:
Hiroshi Osawa, Fukada Keisuke, Ling Guo, Ishibashi Naoto, Koji Kamei, Kenji Momose, Y. Mabuchi, Yoshitaka Nishihara
Publikováno v:
Materials Science Forum. 924:67-71
SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da143b082e75ff04321d421e5e6b397
https://doi.org/10.4028/www.scientific.net/msf.924.67
https://doi.org/10.4028/www.scientific.net/msf.924.67
Publikováno v:
Materials Science Forum. 897:55-58
This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1352a9266e2090c002ef980b0cd8e6
https://doi.org/10.4028/www.scientific.net/msf.897.55
https://doi.org/10.4028/www.scientific.net/msf.897.55
Autor:
Akira Bandoh, Fukada Keisuke, Hiroshi Osawa, Yoshihiko Miyasaka, Ishibashi Naoto, Kenji Momose
Publikováno v:
Materials Science Forum. 897:83-86
The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 1014 cm-3) 4H-SiC epilayers grown by chemical vapor deposition (CVD) were investigated. The variation in doping concentration during epitaxial growth are cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325bc78beb6b1fbcc4617a5ed82c2e3c
https://doi.org/10.4028/www.scientific.net/msf.897.83
https://doi.org/10.4028/www.scientific.net/msf.897.83