Zobrazeno 1 - 9
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pro vyhledávání: '"Isheden, Christian"'
Autor:
Isheden, Christian
A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, be
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-96
The dramatic increase of network infrastructure comes at the cost of rapidly increasing energy consumption, which makes optimization of energy efficiency (EE) an important topic. Since EE is often modeled as the ratio of rate to power, we present a m
Externí odkaz:
http://arxiv.org/abs/1110.1990
Autor:
Isheden, Christian *, Hellström, Per-Erik, von Haartman, Martin, Radamson, Henry H., Östling, Mikael
Publikováno v:
In Materials Science in Semiconductor Processing 2005 8(1):359-362
Autor:
Fettweis, Gerhard, Isheden, Christian
Publication in the conference proceedings of EUSIPCO, Barcelona, Spain, 2011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc20b8a32d45f9c8043bbf072fa61fb
Akademický článek
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Publikováno v:
2011 19th European Signal Processing Conference; 2011, p874-878, 5p
Publikováno v:
MRS Online Proceedings Library; 2004, Vol. 810 Issue 1, p1-6, 6p
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 745 Issue 1, p1-6, 6p
Autor:
Isheden, Christian isheden@imit.kth.se, Hellström, Per-Erik1, von Haartman, Martin1, Radamson, Henry H.1, Östling, Mikael1
Publikováno v:
Materials Science in Semiconductor Processing. Feb2005, Vol. 8 Issue 1-3, p359-362. 4p.