Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ishai Schwarzband"'
Autor:
Shimon Levi, Matan Tobayas, Sean Hand, Angela Karvtsov, Thomas Muelders, Ishai Schwarzband, Hans-Jürgen Stock, Jason R. Osborne
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Optical Proximity Correction (OPC) modeling has evolved throughout the years to address 2D edge placement corrections, driven mainly out of CDSEM measurement results. 3D pattern modeling, and 3D-OPC for resist pattern, is much more complex. 3D inform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50e2df5dbcdf2ce959a1770ac0209db
https://doi.org/10.1117/12.2514666
https://doi.org/10.1117/12.2514666
Autor:
Elad Sommer, Ran Alkoken, Tal Bar-On, Liraz Gershtein, Svetlana Pastur, Roman Kris, Hiroshi Miroku, Efrat Noifeld, I Horikawa, Ishai Schwarzband, Olga Novak, Grigory Klebanov, Sharon Duvdevani-bar, Dhananjay Singh Rathore, Bobin Mathew, Shimon Levy
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
The growing demand for advanced DRAM technologies requires development of novel process control methodologies reflecting design rule shrinkage. The new challenges for CD SEM metrology of dense feature arrays of DRAM layers are widely considered in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4077f68a2acbd3ff30056c8880190825
https://doi.org/10.1117/12.2515233
https://doi.org/10.1117/12.2515233
Autor:
Shimon Levi, Ishai Schwarzband, Zhenhua Ge, Mert Karakoy, Navi Krishnan, Roman Kris, Amit Siany, Zhuangfei Chen, Kejia Wu, Xiaoxiao Zhang
Publikováno v:
2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Advanced FinFET device architecture generates new profile control requirement in 1× node and beyond. The corner at the intersection between the Gate and Fin is critical geometry for device yield and reliability. The residue-free corner at Gate-Fin i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a59ed179225a3637a8ee7a2abb59fd24
https://doi.org/10.1109/asmc.2018.8373196
https://doi.org/10.1109/asmc.2018.8373196
Publikováno v:
SPIE Proceedings.
Self-Aligned Quadruple Patterning (SAQP) is targeted to support the sub 10nm technology nodes. It is consisted of several process steps starting with lithography and Etch to define the pattern backbone. Followed by additional set of processes based o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ded9faae594d78849abb0e9c4e04c35
https://doi.org/10.1117/12.2220814
https://doi.org/10.1117/12.2220814
Autor:
Maayan Bar-Zvi, Eric Solecky, Alok Vaid, Ishai Schwarzband, Zhenhua Ge, Hua Zhou, Shay Yasharzade, Xiaoxiao Zhang, Patrick Snow, Ori Shoval, Ofer Adan
Publikováno v:
SPIE Proceedings.
Traditional metrology solutions are facing a range of challenges at the 1X node such as three dimensional (3D) measurement capabilities, shrinking overlay and critical dimension (CD) error budgets driven by multi-patterning and via in trench CD measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c122b0c2bb21075b2f279e238aa20d
https://doi.org/10.1117/12.2087267
https://doi.org/10.1117/12.2087267
Autor:
Guy M. Cohen, Adam Feinstein, Sarunya Bangsaruntip, Lynne Gignac, Ishai Schwarzband, Yakov Weinberg, Jason A. Osborne, Shimon Levi, Ofer Adan, Sean Hand, Roger Cornell
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In an ongoing study of the physical characterization of Gate-All-Around Silicon Nano Wires (GAASiNW), we found that the thin, suspended wires are prone to buckling as a function of their length and diameter. This buckling takes place between the fixe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29a5782e36a6967caae459892c4f38f4
https://doi.org/10.1117/12.2047031
https://doi.org/10.1117/12.2047031
Autor:
Guy M. Cohen, Cheng Cen, Roger Cornell, Shimon Levi, Ofer Adan, Yakov Weinberg, Ishai Schwarzband, Lynne Gignac
Publikováno v:
SPIE Proceedings.
Imaging of suspended silicon nanonwires (SiNW) by SEM reveals that some of the SiNW are buckled. Buckling can impact device performance and it is therefore important to characterize this phenomenon. Measuring the buckling of suspended silicon nanowir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9639cbc2e4128d426b6f937fb51e8319
https://doi.org/10.1117/12.2013810
https://doi.org/10.1117/12.2013810
Publikováno v:
2012 IEEE 27th Convention of Electrical and Electronics Engineers in Israel.
In this paper we present a new methodology to calibrate and correct in line roughness measurements for Silicon Nano Wires (SiNW) fabrication processes. For successful implementation of these processes in industry, the Silicon Nano Wires (SiNW) with w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87dd666f6203de6b49f0dcc59fd274bd
https://doi.org/10.1109/eeei.2012.6376991
https://doi.org/10.1109/eeei.2012.6376991
Autor:
Sarunya Bangsaruntip, Roman Kris, Ishai Schwarzband, Ofer Adan, Lynne Gignac, Shimon Levi, Guy M. Cohen
Publikováno v:
SPIE Proceedings.
In this paper we present physical characteristics of Silicon Nano Wires (SiNW) fabrication processes, in line SEM metrology measurements, and a new methodology to calibrate and correct in line roughness measurements, improving measurement accuracy. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006feffb9f3f0ca722ee980cbe37415d
https://doi.org/10.1117/12.918402
https://doi.org/10.1117/12.918402
Autor:
Ran Brikman, Nir Shoshani, Shmoolik Mangan, Lior Shoval, Ishai Schwarzband, Vivek Balasubramanian, Sergey Khristo, Shay Goldstein
Publikováno v:
SPIE Proceedings.
Ever since the 180nm technology node the semiconductor industry has been battling the sub-wavelength regime in optical lithography. During the same time development for a 13.5nm Extreme Ultraviolet [EUV] solution has been in development, which would
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef349982099429c615c6469ae1241c3
https://doi.org/10.1117/12.927634
https://doi.org/10.1117/12.927634