Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Isao Yonekura"'
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2018:J2010301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28b783d8691a3e534c131c6cf3ef06c8
https://doi.org/10.1299/jsmemecj.2018.j2010301
https://doi.org/10.1299/jsmemecj.2018.j2010301
Autor:
Takayuki Nakamura, Jun Matsumoto, Tsutomu Murakawa, Masayuki Kuribara, Isao Yonekura, Toshimichi Iwai, Soichi Shida, Shinya Morisaki, Hidemitsu Hakii
Publikováno v:
SPIE Proceedings.
We have studied MVM (Multi Vision Metrology) -SEM E3630 to measure 3D shape of defects. The four detectors (Detector A, B, C and D) are independently set up in symmetry for the primary electron beam axis. Signal processing of four direction images
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef471091b4a9118aa608a22a2aa0c83d
https://doi.org/10.1117/12.2031846
https://doi.org/10.1117/12.2031846
Publikováno v:
SPIE Proceedings.
The required measurement precision for multilayered EUV mask metrology is set below 0.4 nm three sigma. In addition to limited precision of CD-SEM, there are fundamental physical factors that deteriorate the accuracy of the measurements, the most imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6611f4bf894374c8851a31fe40ba1f5e
https://doi.org/10.1117/12.999462
https://doi.org/10.1117/12.999462
Autor:
Tsutomu Murakawa, Soichi Shida, Takayuki Nakamura, Hidemitsu Hakii, Jun Matsumoto, Yasushi Nishiyama, Keishi Tanaka, Isao Yonekura, Masayuki Kuribara, Kenji Komoto, Mitsuo Hiroyama, Toshimichi Iwai
Publikováno v:
SPIE Proceedings.
As feature sizes of semiconductor device structures have continuously decreased, needs for metrology tools with high precision and excellent linearity over actual pattern sizes have been growing. And it has become important to measure not only two-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79cdfb8f1d3515830bfa8ca4c3335426
https://doi.org/10.1117/12.977362
https://doi.org/10.1117/12.977362
Autor:
Isao Yonekura, Takayuki Nakamura, Jun Matsumoto, Hidemitsu Hakii, Tsutomu Murakawa, Yasushi Nishiyama, Masayuki Kuribara, Keishi Tanaka, Hiroshi Fukaya, Yasutaka Kikuchi, Toshimichi Iwai, Masashi Kawashita, Soichi Shida
Publikováno v:
SPIE Proceedings.
A new metrology method for CD-SEM has been developed to measure the side wall angle of a pattern on photomask. The height and edge width of pattern can be measured by the analysis of the signal intensity profile of each channel from multiple detector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ea75e8b78486c2ecc26bf2f629a512
https://doi.org/10.1117/12.899368
https://doi.org/10.1117/12.899368
Publikováno v:
SPIE Proceedings.
Influence of the prominent charging effect on the precision of measuring EUV mask features using CD-SEM was studied. The dimensions of EUV mask features continuously measured by CD-SEM gradually varied because of the charging. The charging effect on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e09a7accbf344460ad6028da0c7b98
https://doi.org/10.1117/12.878728
https://doi.org/10.1117/12.878728
Autor:
Takayuki Nakamura, Yasushi Nishiyama, Jun Matsumoto, Tsutomu Murakawa, Toshimichi Iwai, Hidemitsu Hakii, Yasutaka Kikuchi, Masayuki Kuribara, Keishi Tanaka, Isao Yonekura, Masashi Kawashita, Soichi Shida
Publikováno v:
SPIE Proceedings.
The Multiple Detector CD-SEM acquires the secondary electron from pattern surface at each detector. The 3D shape and height of mask patterns are generated by adding or subtracting signal profile of each detector. In signal profile of the differential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce9e4eea939b60c8166de9033e4fc754
https://doi.org/10.1117/12.879400
https://doi.org/10.1117/12.879400
Autor:
Toshihide Oba, Hidemitsu Hakii, Takayuki Nakamura, Jun Matsumoto, Isao Yonekura, Keishi Tanaka, Masaru Higuchi, Toshimichi Iwai, Yoshiaki Ogiso
Publikováno v:
SPIE Proceedings.
In order to analyze small reticle defects quantitatively, we have developed a function to measure differences in two patterns using contour data extracted from SEM images. This function employs sub-pixel contour data extracted with high accuracy to q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28f1059cbe3d84eed0cebe6dd0dce539
https://doi.org/10.1117/12.833405
https://doi.org/10.1117/12.833405
Autor:
Yoshifumi Sakamoto, Yosuke Kojima, Isao Yonekura, Masashi Kawashita, Hidemitsu Hakii, Keishi Tanaka
Publikováno v:
SPIE Proceedings.
The verification of not only two-dimensional feature but also three-dimensional feature, sidewall angle (SWA), has been becoming increasingly important in NGL mask fabrication. The OMOG (Opaque MoSi on Glass) mask for ArF immersion lithography with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e99890c87441551eecbe1572d09913
https://doi.org/10.1117/12.824280
https://doi.org/10.1117/12.824280
Autor:
Isao Yonekura, Takashi Yoshii, Yo Sakata, Katsumi Oohira, Hidemitsu Hakii, Keishi Tanaka, Yoshiyuki Negishi, Masashi Kawashita, Koichirou Kanayama
Publikováno v:
SPIE Proceedings.
EUV mask is a reflection-type-mask, of which film and structure are very different from those of existing masks (e.g. Cr and MoSi). LWM9000 SEM of Vistec/Advantest was used for measurement of EUV masks. Two types of EUV masks were used to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6ba0ddf56a84eaff059cd79edd79886
https://doi.org/10.1117/12.746373
https://doi.org/10.1117/12.746373