Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Isao Makabe"'
Autor:
Isao Makabe, Gérard M. T. Watts
Publikováno v:
Journal of High Energy Physics, Vol 2018, Iss 6, Pp 1-26 (2018)
Abstract We consider a class of conformal defects in Virasoro minimal models that have been defined as fixed points of the renormalisation group and calculate the leading contribution to the reflection coefficient for these defects. This requires sev
Externí odkaz:
https://doaj.org/article/4f02766e884f4b939ab5c7f69cade161
Autor:
Isao Makabe, Gérard M.T. Watts
Publikováno v:
Journal of High Energy Physics, Vol 2017, Iss 9, Pp 1-51 (2017)
Abstract We consider two different conformal field theories with central charge c = 7/10. One is the diagonal invariant minimal model in which all fields have integer spins; the other is the local fermionic theory with superconformal symmetry in whic
Externí odkaz:
https://doaj.org/article/669ab34abdf74a9e8eab97ae79c51284
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac3febb607703b775c59cc9c6b40acda
https://doi.org/10.1109/bcicts53451.2022.10051701
https://doi.org/10.1109/bcicts53451.2022.10051701
Autor:
Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka, Isao Makabe, Takahiro Gotow, Tomoya Aota
Publikováno v:
Japanese Journal of Applied Physics. 60(SCCF06)
Electrodeless photo-assisted electrochemical etching was performed in an N-polar GaN high-electron-mobility transistor to obtain device isolation with a flat wet etching surface. The root mean square roughness of the surface after 30 nm etching was 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44d6615bc90bdb1f2419fb7eb494d8ad
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100845762
Autor:
Shinsei Ryu, Dmitri V. Fursaev, Andy O'Bannon, Johanna Erdmenger, John Cardy, Christoph Schweigert, Daniel Friedan, Isao Makabe, Volker Schomerus, Natan Andrei, Robert Parini, Yu Nakayama, Cornelius Schmidt-Colinet, Agnese Bissi, Brandon Robinson, Gerard Watts, Anatoly Konechny, Nadav Drukker, Patrick Dorey, Matthew Buican, Charlotte Kristjansen
Publikováno v:
Journal of physics / A 53(45), 453002 (2020). doi:10.1088/1751-8121/abb0fe
Journal of physics / A 53(45), 453002 (2020). doi:10.1088/1751-8121/abb0fe
A review of Boundary and defect conformal field theory: open problems and applications, following a workshop held at Chicheley Hall, Buckinghamshire, UK, 7���8 Sept
A review of Boundary and defect conformal field theory: open problems and applications, following a workshop held at Chicheley Hall, Buckinghamshire, UK, 7���8 Sept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a4a96e0cfd18994a2b8c8579c6070c2
https://bib-pubdb1.desy.de/record/454426
https://bib-pubdb1.desy.de/record/454426
Publikováno v:
BCICTS
This paper describes the high breakdown voltage InAlN HEMT development and the possibility of InAlN HEMT to lower frequency range, including 5G sub-6 GHz band applications. The developed InAlN barrier HEMT with GaN cap layer was successfully suppress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe24e190b18f619e2991e2c30de8c4b
https://doi.org/10.1109/bcicts45179.2019.8972761
https://doi.org/10.1109/bcicts45179.2019.8972761
Autor:
Ryosuke Aonuma, Isao Makabe, Koushi Hotta, Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Insulator deposition directly on the GaN channel is necessary for the reduction of gate leakage current in N-polar GaN HEMTs. For higher speed, a thinner insulator is preferable. Therefore, the N-polar GaN HEMT with Al 2 O 3 gate insulator was fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba817709d77d36482b5f1af1e649cc5
https://doi.org/10.1109/iciprm.2019.8819128
https://doi.org/10.1109/iciprm.2019.8819128
Autor:
Issei Watanabe, Ken Nakata, Akifumi Kasamatsu, Y. Yamashita, Isao Makabe, Tomohiro Yoshida, Kazutaka Inoue
Publikováno v:
2019 Compound Semiconductor Week (CSW).
InAlN-MIS-High Electron Mobility Transistors (HEMTs) with 90 nm gate length were fabricated on a Si substrate. The devices, with pad electrodes, exhibited on-resistance of $1.38\ \Omega \mathrm{mm}$ , contact resistance of $0.35\ \Omega \mathrm{mm}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1868122c7704aa3df8159701b86918c
https://doi.org/10.1109/iciprm.2019.8819348
https://doi.org/10.1109/iciprm.2019.8819348
Autor:
Isao Makabe, Tetsuya Suemitsu
Publikováno v:
physica status solidi (b). 257:1900528
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f841aab8f08de8b17e15cc1e4f2d6b21
https://doi.org/10.1002/pssb.201900528
https://doi.org/10.1002/pssb.201900528
Autor:
Koushi Hotta, Yasuyuki Miyamoto, Isao Makabe, Kosuke Itagaki, Yumiko Tomizuka, Shigeki Yoshida
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c404b1f93281553745a3268de35cf5
https://doi.org/10.7567/1347-4065/ab1063
https://doi.org/10.7567/1347-4065/ab1063