Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Isamu Niki"'
Autor:
Alexander Shvartser, Koichi Okamoto, Isamu Niki, Yukio Narukawa, Yoichi Kawakami, Takashi Mukai, Axel Scherer, George Maltezos
Publikováno v:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 204(6):2103-2107
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGaN/GaN quantum wells (QWs). Large enhancement of photoluminescence (PL) of both blue and green emissions was observed with silver coated samples, where
Publikováno v:
physica status solidi (c). 2:2841-2844
We use surface plasmons to increase the light emission efficiency from InGaN/GaN quantum wells by covering these with thin metallic films. Large luminescence enhancements were measured when silver or aluminum layers are deposited 10 nm above an InGaN
Publikováno v:
Nature Materials. 3:601-605
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here
Autor:
Kouichiro Deguchi, Shinichi Nagahama, Tomoya Yanamoto, Tomotsugu Mitani, Daisuke Morita, Isamu Niki, Shinya Sonobe, Yukio Narukawa, Yoshinori Murazaki, Motokazu Yamada, Takahiro Naitou, Shuji Shioji, Masahiko Sano, Hiroto Tamaki, Takashi Mukai, Masatoshi Kameshima, S. Yamamoto
Publikováno v:
physica status solidi (a). 200:52-57
We review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and quantum efficiency. We also discuss how to improve the external quantum efficiency of nitride-based LEDs. Secondly, t
Autor:
Yukio Narukawa, Kouichiro Deguchi, Shuji Shioji, Shinya Sonobe, Takashi Mukai, Isamu Niki, Tomotsugu Mitani, Masahiko Sano, Motokazu Yamada
Publikováno v:
Japanese Journal of Applied Physics. 41:L1431-L1433
We markedly improved the extraction efficiency of emission light from the InGaN-based light-emitting diode (LED) chips grown on sapphire substrates. Two new techniques were adopted in the fabrication of these LEDs. One is to grow nitride films on the
We observed a 32-fold increase in the spontaneous emission rate of InGaN/GaN quantum well (QW) at 440 nm by employing surface plasmons (SPs) probed by time-resolved photoluminescence spectroscopy. We explore this remarkable enhancement of the emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9bf92e438b4b853423dd6e546e9fcc5
https://resolver.caltech.edu/CaltechAUTHORS:OKAapl05b
https://resolver.caltech.edu/CaltechAUTHORS:OKAapl05b
Autor:
Takashi Mukai, Yoichi Kawakami, Axel Scherer, Koichi Okamoto, K. Nishizuka, Isamu Niki, George Maltezos, Yukio Narukawa, Alexander Shvartser
We report a dramatic increase in the photoluminescence (PL) emitted from InGaN/GaN quantum wells (QW), obtained by covering these sample surface with thin metallic films. Remarkable enhancements of PL peak intensities were obtained from In_(0.3)Ga_(0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12d6183e8e34a9c935c2b1e8cb01314d
https://resolver.caltech.edu/CaltechAUTHORS:20180710-092732755
https://resolver.caltech.edu/CaltechAUTHORS:20180710-092732755
Autor:
Motokazu Yamada, Takashi Mukai, Shinya Sonobe, Isamu Niki, Yukio Narukawa, Tomotsugu Mitani, Hiroto Tamaki, Daisuke Morita, Yoshinori Murazaki
Publikováno v:
SPIE Proceedings.
We show recent results of GaN based LEDs, the high efficiency blue LED, the high efficacy white LED, the high color rendering LED, the warm white LED, and the high output power 365-nm UV LED. The output power and the external efficiency of the high e
Autor:
Isamu Niki, Shuji Shioji, Shinya Sonobe, Tomotsugu Mitani, Ryoma Suenaga, Kunihiro Izuno, Yukio Narukawa, Motokazu Yamada, Takashi Mukai
Publikováno v:
SPIE Proceedings.
High-efficient light emitting diodes (LEDs) emitting red, amber, green, blue and ultraviolet light have been obtained through the use of an InGaN active layers. The localized energy states caused by In composition fluctuation in the InGaN active laye