Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Isamu Nashiyama"'
Autor:
Kenta Noguchi, Kenji Sugimoto, Yasuo Ishimaru, Tadaaki Morimura, Yasuo Sakaide, Hiroaki Asai, Isamu Nashiyama, Yuji Okazaki, Kensuke Shiba
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3109-3114
SEB tolerance of SiC power MOSFETs against terrestrial neutrons is studied. It is shown that the failure probability increases exponentially with applied voltage and is several orders of magnitude lower than that of a Si MOSFET. The energetic seconda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b03bfbcad68369b10a5d9fb99f3aa447
https://doi.org/10.1109/tns.2014.2371892
https://doi.org/10.1109/tns.2014.2371892
Autor:
Hiroaki Asai, Isamu Nashiyama, Mieko Matsuda, Yoshio Miyazaki, Yoshiya Iide, Kensuke Shiba, Kenji Sugimoto
Publikováno v:
IEEE Transactions on Nuclear Science. 59:880-885
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835c61fcbf0a757507dfc707c082471b
https://doi.org/10.1109/tns.2012.2203145
https://doi.org/10.1109/tns.2012.2203145
Autor:
Kenji Sugimoto, K. Nagayama, Yosuke Iwamoto, Hiroaki Asai, Isamu Nashiyama, Atsushi Tamii, Yukio Sakamoto, Mitsuhiro Fukuda, Kichiji Hatanaka, Keiji Takahisa
Publikováno v:
Nuclear Technology. 173:210-217
The 30-deg white neutron beam at the Research Center for Nuclear Physics (RCNP) cyclotron facility has been characterized as a probe suitable for testing of single-event effects (SEE) in semiconduc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03989c39a1d908f31ca8e5d43382a9ed
https://doi.org/10.13182/nt11-a11550
https://doi.org/10.13182/nt11-a11550
Publikováno v:
Radiation Physics and Chemistry. 60:269-272
To investigate the tolerance of single-event upset (SEU) for GaAs devices, we have measured the transient currents induced in GaAs diodes by energetic heavy particles such as 15 MeV oxygen ions. The measurements were made by combining a focused ion m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb22ba2562042b9b1d3bbce0ee220b55
https://doi.org/10.1016/s0969-806x(00)00360-1
https://doi.org/10.1016/s0969-806x(00)00360-1
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Autor:
Gerhard Pensl, Akira Uedono, Toshiyuki Ohdaira, Takeshi Ohshima, Ryoichi Suzuki, Thomas Frank, Hisayoshi Itoh, Isamu Nashiyama, Shoichiro Tanigawa, Masahito Yoshikawa, Tomohisa Mikado
Publikováno v:
Scopus-Elsevier
Depth distributions and species of defects were determined from measurements of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P+ at a dose of 1×1015 cm−2. The annealing beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d529f533c2ae7d6610664216db84e14
https://doi.org/10.1063/1.373039
https://doi.org/10.1063/1.373039
Autor:
Shoichiro Tanigawa, Yasushi Aoki, Akira Uedono, Isamu Nashiyama, Masahito Yoshikawa, Hisayoshi Itoh, Takeshi Ohshima
Publikováno v:
Journal of Applied Physics. 86:5392-5398
Vacancy-type defects and their annealing properties for O+- or N2+-implanted 6H–SiC were studied using a monoenergetic positron beam. For ion-implanted specimens with a dose of 1×1013 cm2, the mean size of open volume of defects was estimated to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5872e25b6a26a14b2c1fcb7ea51014c
https://doi.org/10.1063/1.371536
https://doi.org/10.1063/1.371536
Publikováno v:
Philosophical Magazine Letters. 79:813-817
Vanadium dioxide (VO 2 ) thin films deposited on (1010) sapphire are composed of two mixed monoclinic phases, namely M1 and M2. The M1 phase is unstable because of the existence of a larger misfit strain in the (102) VO 2 film. The reduction of misfi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d58ceef62187a0eb44c39e6131ea2f
https://doi.org/10.1080/095008399176634
https://doi.org/10.1080/095008399176634
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 158:260-263
Transient currents induced in silicon-on-insulator (SOI) devices by high energy-carbon or oxygen ions were evaluated using a focused ion microbeam and a wide bandwidth measurement system. The total amount of collected charge in the SOI pn junction wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b47ea59ffce8e4a05cc56dddc383d3d0
https://doi.org/10.1016/s0168-583x(99)00505-4
https://doi.org/10.1016/s0168-583x(99)00505-4
Autor:
Keizo Ishii, Takuro Sakai, Tomihiro Kamiya, Masahiro Takebe, Isamu Nashiyama, Tsuyoshi Hamano, Toshio Hirao
Publikováno v:
Radiation Physics and Chemistry. 53:461-467
The aiming accuracy of the single-ion-hit method has been studied by the measurement of etch-pit patterns on a CR-39 film irradiated with a heavy-ion microbeam. It becomes clear that the aiming accuracy is determined to be the size of the core-part o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd6352bafc10dc7ac66574de6382186
https://doi.org/10.1016/s0969-806x(98)00133-9
https://doi.org/10.1016/s0969-806x(98)00133-9
Autor:
Takeshi Ohshima, Isamu Nashiyama, Akira Uedono, K. Abe, Yasushi Aoki, S. Tanigawa, Hisayoshi Itoh, Masahito Yoshikawa
Publikováno v:
Scopus-Elsevier
Positron annihilation measurements using monoenergetic positron beams were performed to study vacancy-type defects introduced into 6H-SiC by implantation of phosphorus ions, P, and the interactions among such defects due to annealing up to 1500°C. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::307be1bc795a97b5513ce2161216fda9
https://doi.org/10.1007/s003390050794
https://doi.org/10.1007/s003390050794