Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Isak Reines"'
Publikováno v:
Journal of Microelectromechanical Systems. 20:193-203
This paper presents an RF microelectromechanical system switched capacitor which is based on a thin-film alu minum circular beam geometry that exhibits reduced sensitivity to both initial residual stress and stress changes versus ambient temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2154619ef226a8e7e13b7325d802a538
https://doi.org/10.1109/jmems.2010.2090505
https://doi.org/10.1109/jmems.2010.2090505
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:1887-1895
This paper presents a compact low-loss tunable X-band bandstop filter implemented on a quartz substrate using both miniature RF microelectromechanical systems (RF-MEMS) capacitive switches and GaAs varactors. The two-pole filter is based on capacitiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5afce11273d70c54e58b3bc77ab24583
https://doi.org/10.1109/tmtt.2010.2050621
https://doi.org/10.1109/tmtt.2010.2050621
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 58:381-389
This paper presents a miniature high-Q tunable evanescent-mode cavity filter using planar capacitive RF microelectromechanical system (MEMS) switch networks and with a frequency coverage of 4.07-5.58 GHz. The two-pole filter, with an internal volume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2a8abfcdef464d6b7f5596ad20bb29
https://doi.org/10.1109/tmtt.2009.2038448
https://doi.org/10.1109/tmtt.2009.2038448
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:2348-2355
This paper presents a low-loss 4-6-GHz 3-bit tunable filter on a quartz substrate using a high-Q 3-bit orthogonal bias RF microelectromechanical systems capacitance network. Detailed design equations for the capacitively loaded coupled lambda/2 reson
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80889f711991c93c497c633122a0f5b
https://doi.org/10.1109/tmtt.2008.2003521
https://doi.org/10.1109/tmtt.2008.2003521
Autor:
Isak Reines, Gabriel M. Rebeiz
Publikováno v:
2011 IEEE 24th International Conference on Micro Electro Mechanical Systems.
We present the design, fabrication, and measurement of an RF MEMS switched capacitor with > 10 W power handling at 10 GHz under hot-switching conditions while maintaining a relatively-low (< 30 V) pull-in voltage. The device consists of separate RF a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1520dfd173f462de7a3c37d4388c8e1e
https://doi.org/10.1109/memsys.2011.5734537
https://doi.org/10.1109/memsys.2011.5734537
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper presents a high-Q tunable evanescent-mode cavity filter using capacitive RF MEMS cantilever switches with a frequency coverage of 5.5–4.3 GHz. The filter results in an insertion loss of 2.6–5.3 dB over the tuning range and a 3-dB bandw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c812d62d1308ee8d6a53f3ff5496b9a9
https://doi.org/10.1109/mwsym.2009.5165904
https://doi.org/10.1109/mwsym.2009.5165904
Autor:
Isak Reines, Gabriel M. Rebeiz
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper presents an RF MEMS switched-capacitor suitable for VHF and UHF tunable filters and reconfigurable matching networks. The device is based on a symmetric circular beam geometry that results in low-series-inductance compact device arrays for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54efa6007f9e69c02832df9d1659da9d
https://doi.org/10.1109/mwsym.2009.5165907
https://doi.org/10.1109/mwsym.2009.5165907
Publikováno v:
2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems.
We present the design, fabrication, and measurement of an RF MEMS (Radio Frequency Micro-Electromechanical System) switched capacitor that exhibits reduced sensitivity to residual stress and temperature. The device is based on a circularly symmetric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c0c2b7687687e1793c93439b345393
https://doi.org/10.1109/memsys.2009.4805524
https://doi.org/10.1109/memsys.2009.4805524