Three-dimensional IC's prolong the life of Moore's law

Autor: Brunets, I., Boogaard, A., Isai, I.G., Aarnink, Antonius A.I., Kovalgin, Alexeij Y., Holleman, J., Schmitz, Jurriaan

Publikováno v: Proceedings of 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005, 76-78
STARTPAGE=76;ENDPAGE=78;TITLE=Proceedings of 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005
ISSUE=8;STARTPAGE=76;ENDPAGE=78;TITLE=8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

In this work we make steps forwards developing a low-temperature technology intended for the fabrication of 3-D structures. Several technology steps like low-temperature deposition of semiconductor and dielectric thin films, laser crystallization and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b9e48164443e4eb0c2476c4ea3788efd
https://research.utwente.nl/en/publications/threedimensional-ics-prolong-the-life-of-moores-law(6c755436-f268-4b86-ac62-986beb914cd2).html

Low hydrogen content silicon nitride films deposited at room temperature with a multipolar ECR plasma source

Autor: Isai, I.G., Holleman, J., Wallinga, Hans, Woerlee, P.H.

Publikováno v: Journal of the Electrochemical Society, 151(10), C649-C654. The Electrochemical Society Inc.

Silicon nitride layers with very low hydrogen content (less than 1 atomic percent) were deposited at near room temperature, from N2 and SiH4, with a multipolar electron cyclotron resonance plasma. The influences of pressure and nitrogen flow rate on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::0649ab673bdaf500b7f968df44b5028e
https://research.utwente.nl/en/publications/39b33e54-a8db-400e-9e7a-bc42387250ff

Physical properties of silicon oxide layers deposited at room temperature by a combination of ECR plasma and high-speed jet of silane

Autor: Isai, I.G., Kovalgin, Alexeij Y., Holleman, J., Wallinga, Hans, Woerlee, P.H., Cobianu, C., Modreanu, M.

Publikováno v: Proceedings of Chemical Vapor Deposition XVI and EUROCVD 14, 609-616
STARTPAGE=609;ENDPAGE=616;TITLE=Proceedings of Chemical Vapor Deposition XVI and EUROCVD 14

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::02b5f26bf4f4625d3baf289d676a1d2c
https://research.utwente.nl/en/publications/physical-properties-of-silicon-oxide-layers-deposited-at-room-temperature-by-a-combination-of-ecr-plasma-and-highspeed-jet-of-silane(4482675a-7ece-460d-aaeb-3a84f456eb68).html

Silicon nitride layers obtained by ECR PECVD

Autor: Isai, I.G., Holleman, J., Woerlee, P.H., Wallinga, Hans

Publikováno v: ISSUE=5;STARTPAGE=39;ENDPAGE=41;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

It has been found that good quality silicon nitride films can be deposited at room temperature, with an alternate electron cyclotron resonance (ECR) plasma source, called multipolar ECR. The effects of several deposition conditions on physical and el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::70803719d4c23e8d94933f92f6f1fcff
https://research.utwente.nl/en/publications/silicon-nitride-layers-obtained-by-ecr-pecvd(e78ea4a5-8c43-485e-8bb0-d384bfe2bb5d).html

Electrical Conduction Processes in Silicon Oxide Films Obtained by ECR PECVD

Autor: Isai, I.G., Holleman, J., Woerlee, P.H., Wallinga, Hans

Publikováno v: Proceedings of the SAFE Conference, 76-81
STARTPAGE=76;ENDPAGE=81;TITLE=Proceedings of the SAFE Conference

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::6aeeab508a564e31d0cbcc28db1a230f
https://research.utwente.nl/en/publications/electrical-conduction-processes-in-silicon-oxide-films-obtained-by-ecr-pecvd(b0c44521-3484-4383-bad6-bd92f481694e).html