Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition.

Autor: Isai, Gratiela I., Holleman, Jisk, Wallinga, Hans, Woerlee, Pierre H.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2004, Vol. 22 Issue 3, p1022-1029, 8p