Stress or Strain Does Not Impact Sorption in Stiff Mesoporous Materials

Autor: Isabelle Trimaille, C Noûs, Etienne Rolley, Annie Grosman, M Bossert

Publikováno v: Langmuir
Langmuir, American Chemical Society, 2020, 36 (37), pp.11054-11060. ⟨10.1021/acs.langmuir.0c01939⟩

The present paper investigates strain-induced sorption in mesoporous silicon. Contrarily to a previous report based on indirect evidence, we find that external mechanical strain or stress has no measurable impact on sorption isotherms, down to a rela

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d483dbd293bd06ec4b8961c17726875
https://pubmed.ncbi.nlm.nih.gov/34106725

Study of thin hafnium oxides deposited by atomic layer deposition

Autor: Isabelle Trimaille, Ian Vickridge, D. Blin, F. Martin, J.-J. Ganem

Publikováno v: Nuclear instruments, methods in physics research. Section B, 219-20
the Sixteenth International Conference on Ion Beam Analysis
the Sixteenth International Conference on Ion Beam Analysis, 2004, France. pp.856-861., ⟨10.1016/j.nimb.2004.01.176⟩

We have deposited thin films (3.5, 7.5 and 22 nm) by atomic layer deposition (ALD) using HfCl 4 and H 2 O precursors at 350 °C. Growth, thermal annealing and thermal reoxidation of the thin hafnium oxide layers under controlled ultra-dry oxygen atmo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c0eafa70e08e631c36eab026a806f57
https://doi.org/10.1016/j.nimb.2004.01.176

Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling

Autor: Claudio Radtke, Isabelle Trimaille, S. Rigo, Ian Vickridge, Fernanda Chiarello Stedile, Israel Jacob Rabin Baumvol, J.-J. Ganem

Publikováno v: Applied Surface Science. :570-574

We investigated the limiting step of thermal growth of SiO2 on SiC. For that we determined the incorporation of oxygen during different stages of the oxidation process of 6H-SiC wafers as well as of Si wafers, for comparison. Oxidations in natural dr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::455ad6ed87cf15be58a080101b249574
https://doi.org/10.1016/s0169-4332(03)00403-3

Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

Autor: Edit Szilágyi, Gábor Battistig, Ian Vickridge, Isabelle Trimaille, J.-J. Ganem, D. Tromson

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 190, pp.574. ⟨10.1016/S0168-583X(01)01303-9⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 190, pp.574. ⟨10.1016/S0168-583X(01)01303-9⟩

SiC is a large band gap semiconductor, promising for high power and high frequency devices. The thermal oxide is SiO2 however the growth rates of thermal oxide on SiC are substantially slower than on Si, and different along the polar directions ( 〈

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::443f9ff5ede38edae2bd69af2018a1dc
https://doi.org/10.1016/s0168-583x(01)01303-9

Reactions in the System O 2 ‐ NO ‐ N 2 O in a Conventional Furnace: II. Chemical Reactions Between O 2 and NO

Autor: J.-J. Ganem, Isabelle Trimaille, T. Åkermark, S. Rigo

Publikováno v: Journal of The Electrochemical Society. 146:4586-4589

The chemical reactions in the system O{sub 2}-NO{sub x} has been studied in a conventional furnace. The reaction rates of formation and decomposition of NO{sub x} have been measured by monitoring the isotopic concentration in a closed system (convent

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77eeacef991e6fd0e897ff237ef77bf4
https://doi.org/10.1149/1.1392678