Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Isabella Rossetto"'
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Autor:
Giuseppe Croce, Eleonora Gevinti, Antonio Andreini, Isabella Rossetto, Rossella Piagge, Luca Merlo, L. Di Biccari, A. Milani, Gabriella Ghidini, Lorenzo Cerati, Fabrizio Fausto Renzo Toia
This paper discusses the transmission line pulse (TLP) analysis, generally used for electrostatic discharge (ESD) device characterization, as high potential usable tool also for non-ESD structures. TLP technique, combined with DC and pulsed I-V chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::257a9a59889cca6a8425816fc72ff437
http://arxiv.org/abs/2002.08716
http://arxiv.org/abs/2002.08716
Autor:
Peter Moens, Stefano Dalcanale, A. Banerjee, Enrico Zanoni, Isabella Rossetto, Gaudenzio Meneghesso, Alaleh Tajalli, Matteo Meneghini, C. De Santi
Publikováno v:
IEEE Transactions on Electron Devices
This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain an
Autor:
Helmut Brech, Matteo Meneghini, S. Lavanga, Gaudenzio Meneghesso, Isabella Rossetto, Enrico Zanoni, A. Barbato, Andrea Favaron, Haifeng Sun, Marco Silvestri
Publikováno v:
IEEE Transactions on Electron Devices. 64:1032-1037
This paper demonstrates that—for high-electric fields and drain current levels—the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency HEMTs significantly deviate from the well-known bell-shape, due to the turn-on of a seconda
Autor:
E. Brusaterra, Gaudenzio Meneghesso, M. Fregolent, Fabiana Rampazzo, Nicola Modolo, Alessandro Caria, Nicola Trivellin, A. Nardo, C. De Santi, F. Piva, Enrico Zanoni, Matteo Buffolo, Isabella Rossetto, F. Masin, Matteo Meneghini, G. Zhan, F. Chiocchetta, C. Sharma, D. Favero, T. Bordignon
Publikováno v:
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 1:100018
Several mechanisms may contribute to the degradation of GaN transistors; in this paper we discuss the main processes that limit the lifetime of GaN power devices, with focus on the following relevant aspects: (i) the degradation/breakdown induced by
Autor:
Enrico Zanoni, Carlo De Santi, Oliver Hilt, Gaudenzio Meneghesso, Isabella Rossetto, Joachim Wuerfl, Eldad Bahat-Treidel, Stefano Dalcanale, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. 63:2334-2339
This paper reports an experimental demonstration of the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress. By means of combined dc, optical analysis, and 2-D simulations,
Autor:
Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Gaudenzio Meneghesso, Denis Marcon, Tian-Li Wu, Enrico Zanoni, Marleen Van Hove, Stefaan Decoutere, Steve Stoffels
Publikováno v:
IEEE Electron Device Letters. 37:474-477
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator–semiconductor high electron mobility transistors with partially recessed AlGaN. Based on a set of stress/recovery experiments carried o
Autor:
Denis Marcon, Enrico Zanoni, Tian-Li Wu, Davide Bisi, Matteo Meneghini, Marleen Van Hove, Stefaan Decoutere, Steve Stoffels, Gaudenzio Meneghesso, Isabella Rossetto
Publikováno v:
Microelectronics Reliability. 58:151-157
This paper reports an extensive analysis of the trapping and reliability issues in AlGaN/GaN metal insulator semiconductor (MIS) high electron mobility transistors (HEMTs). The study was carried out on three sets of devices with different gate insula
Autor:
Dionyz Pogany, Oliver Hilt, Gaudenzio Meneghesso, Riccardo Silvestri, Eldad Bahat-Treidel, Mattia Capriotti, Clément Fleury, Joachim Würfl, Matteo Meneghini, Enrico Zanoni, Isabella Rossetto, Stefano Dalcanale, Frank Brunner, Gottfried Strasser, Arne Knauer
Publikováno v:
ResearcherID
This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysis was carried out on transistors with p-type gate, rated
Autor:
Gaudenzio Meneghesso, Fabiana Rampazzo, Alberto Zanandrea, Isabella Rossetto, Raphaël Aubry, M.A. di Forte-Poisson, Marta Bagatin, Simone Gerardin, Sylvain Delage, Alessandro Paccagnella, M. Oualli, Enrico Zanoni, Christian Dua, Matteo Meneghini
Publikováno v:
Solid-State Electronics. 113:15-21
Robustness of InAlN/GaN devices under proton radiation is investigated. Several proton fluences ranging from 1 × 10 14 to 4 × 10 14 have been considered on two typologies of devices. Displacement damage is found to be the major responsible of devic