Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Isaac Khalaf"'
Autor:
Patrick Fay, Bob Grabar, James M. Chappell, Peter Chen, Isaac Khalaf, Erdem Arkun, Jeong-Sun Moon, M. Antcliffe, Nivedhita Venkatesan, Joel Wong, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 41:1173-1176
We report scaled, graded-channel AlGaN/GaN HEMTs with an extrinsic fT and fMAX of 170 GHz and 363 GHz, which is the highest in emerging graded-channel GaN HEMTs. At 50-nm gate length, the fT*Lg of 8.5 GHz $\ast \mu \text{m}$ is comparable to that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f58368b168bd7acd238450d1a80043
https://doi.org/10.1109/led.2020.3005337
https://doi.org/10.1109/led.2020.3005337
Autor:
Patrick Fay, Isaac Khalaf, R. Grabar, Erdem Arkun, Andrea Corrion, J. Wong, P. Chen, James M. Chappell, M. Antcliffe, Nivedhita Venkatesan, Jeong-Sun Moon
Publikováno v:
Electronics Letters. 56:678-680
The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d8f476a091c4ad405d86cde542bba1
https://doi.org/10.1049/el.2020.0281
https://doi.org/10.1049/el.2020.0281
Autor:
Jeong Moon, Nivedhita Venkatesan, Joel Wong, Isaac Khalaf, Patrick Fay, Bob Grabar, Peter Chen, Erdum Arkun, Michael Antcliffe, David Fanning
Publikováno v:
BCICTS
GaN-based HEMTs are attractive devices for RF, microwave, and millimeter-wave applications, with excellent power and noise figure performance having been demonstrated. Recently, graded-channel structures have been explored for their potential to impr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43680b4ed0ea89295618db6d6081b04f
https://doi.org/10.1109/bcicts48439.2020.9392987
https://doi.org/10.1109/bcicts48439.2020.9392987
Autor:
Erdem Arkun, Andrea Corrion, Joel Wong, James M. Chappell, Nivedhita Venkatesan, Peter Chen, Isaac Khalaf, M. Antcliffe, Chuong Dao, Patrick Fay, Bob Grabar, Jeong-Sun Moon
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
We report high-speed graded-channel GaN HEMTs with 10 dB OIP3 improvement over current conventional AlGaN/GaN HEMTs at the same DC power. Thus, the graded-channel GaN HEMTs demonstrated a record OIP3/Pdc of 17 - 20 dB at 30 GHz. Also, these graded-ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddeba47d19bee9aae925aecc52463a0f
https://doi.org/10.1109/ims30576.2020.9223775
https://doi.org/10.1109/ims30576.2020.9223775
Autor:
Joel C. Wong, Haw Y. Tai, Helen Fung, D. Regan, D. F. Brown, Dayward Santos, Eric M. Prophet, Shawn D. Burnham, Miroslav Micovic, A. Kurdoghlian, Jesus Magadia, Isaac Khalaf, Yan Tang, Bob Grabar
Publikováno v:
IEEE Electron Device Letters. 38:1708-1711
We report the state-of-the-art $V$ -band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The $200~\mu \text{m}$ ( $4\times 50 ~\mu \text{m}$ ) wide GaN DHFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0e2db75cf2de7515da41fefbef6647
https://doi.org/10.1109/led.2017.2763940
https://doi.org/10.1109/led.2017.2763940
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6192ed1cc0d83bcc42f81e02568f8095
https://doi.org/10.1109/tsm.2017.2748921
https://doi.org/10.1109/tsm.2017.2748921
Autor:
Peter Chen, Jeong-Sun Moon, Isaac Khalaf, Joel Wong, Taylor Post, Bob Grabar, Andrea Corrion, Erdem Arkun, M. Antcliffe
Publikováno v:
2019 IEEE MTT-S International Microwave Symposium (IMS).
We report the first demonstration of graded-channel GaN HEMTs operating in the millimeter-wave frequency range. At 30 GHz, these graded-channel GaN HEMTs demonstrated excellent PAE of 65% at an associated power density of 3 W/mm. The measured PAE and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b1439e02a8e4c08bd3fdd33d558f68
https://doi.org/10.1109/mwsym.2019.8700832
https://doi.org/10.1109/mwsym.2019.8700832
Autor:
Jeong-Sun Moon, Joel Wong, Bob Grabar, Mike Antcliffe, Peter Chen, Andrea Corrion, Erdem Arkun, Isaac Khalaf, Sam Kim, Patrick Fay
Publikováno v:
ECS Meeting Abstracts. :1172-1172
RF communications with spectral efficiency utilizes complex modulation schemes that require amplifier linearity [1]. As amplifier operating frequency moves into the millimeter wave (mm-wave) range, the power added efficiency becomes also important to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a05917b2be00d679c19639c48ad5abb8
https://doi.org/10.1149/ma2019-02/25/1172
https://doi.org/10.1149/ma2019-02/25/1172
Autor:
Joe Tai, Joel C. Wong, Helen Fung, Hector L. Bracamontes, Eric M. Prophet, David F. Brown, A. Kurdoghlian, D. Regan, C. McGuire, Miroslav Micovic, Dayward Santos, Shawn D. Burnham, Adele E. Schmitz, Herrault Florian G, Isaac Khalaf, Yan Tang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0619ddec3291dba53fc3e0a76909659d
https://doi.org/10.1109/iedm.2016.7838337
https://doi.org/10.1109/iedm.2016.7838337
Autor:
Isaac Khalaf, Yan Tang, Joel Wong, Miroslav Micovic, Eric M. Prophet, Joe Tai, Dayward Santos, Helen Fung, Charles McGuire, David F. Brown, Shawn D. Burnham, A. Kurdoghlian, Adele E. Schmitz, Herrault Florian G, Robert Grabar, Hector L. Bracamontes, D. Regan
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a502bdc7477f683fa90c3e2669a53bb
https://doi.org/10.1109/csics.2016.7751051
https://doi.org/10.1109/csics.2016.7751051