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pro vyhledávání: '"Isaac K. Lam"'
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Publikováno v:
IEEE Journal of Photovoltaics. 10:1185-1190
The precursor reaction process for the fabrication of Cu(In,Ga)Se $_{2}$ solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experi
Autor:
Isaac K. Lam, Kyeongchan Moon, Sina Soltanmohammad, Gregory M. Hanket, Woo Kyoung Kim, William N. Shafarman
Publikováno v:
Journal of Vacuum Science & Technology A. 40:033402
The reaction of metallic precursors has become the primary method of industrial manufacturing for Cu(In,Ga)Se2. Commonly used Cu3Ga sputter targets have thus far dictated that the relative Ga composition of these precursors is Ga/(In+Ga) [Formula: se
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
CIGS absorbers are developed using Se-capped precursor films with increased Ga composition. Films are reacted using a rapid thermal process, which uses reaction times on the order of minutes. It is observed that Ga profiles can be controlled by adjus
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
The precursor reaction method for the fabrication of Cu(In,Ga)Se 2 (CIGS) solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab scale exper
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Cu(In,Ga)(Se,S) 2 (CIGSSe) based solar cell devices were fabricated using the selenization/sulfization of metallic pre-cursors. The resulting front sulfur compositional gradient was controlled by varying the selenization time which affects the extent