Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Isaac Hernández-Calderón"'
Publikováno v:
Journal of Crystal Growth. 593:126767
Publikováno v:
Nanotechnology. 31(28)
CdSe fractional monolayer quantum dots (FMQDs) embedded in a ZnSe matrix were produced by atomic layer epitaxy with a nominal coverage of 0.5 monolayer. They have a thickness of a/2, where a is the strained perpendicular lattice constant of cubic CdS
Publikováno v:
physica status solidi (b). 259:2100574
Publikováno v:
Journal of Electronic Materials. 47:4399-4403
We present our results related to the growth, photoluminescence characterization and modelling of a quantum well (QW) involving a type II heterostructure, Zn1-xCdxSe/ZnTe/Zn1-xCdxSe, confined within ZnSe barriers with a type I band alignment. We show
Publikováno v:
Journal of Alloys and Compounds. 846:155698
Zn1-xCdxSe/ZnSe quantum wells (QWs) are employed in the active region of heterostructures with emission in the yellow-blue optical range. The knowledge of the thermal stability of these quantum wells is of great importance for optimal device performa
Publikováno v:
Journal of Vacuum Science & Technology B. 38:042202
The authors present the results of the photoluminescence characterization of three asymmetric triple quantum well (ATQW) systems. Each one contains three ultrathin CdSe quantum wells of 1, 2, and 3 monolayers (ML) thickness grown by atomic layer epit
Publikováno v:
Journal of Vacuum Science & Technology B. 38:032209
A heterostructure containing several sheets of CdSe fractional monolayer quantum dots with nominal coverages of 0.5 and close to 0.25 of a monolayer (ML) embedded in a ZnSe matrix was successfully grown by a combination of submonolayer epitaxy and mo
Autor:
Isaac Hernández-Calderón
Publikováno v:
II-VI Semiconductor Materials and Their Applications ISBN: 9780203751305
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13e9038919e9985280dc4e50b3a90fc
https://doi.org/10.1201/9780203751305-4
https://doi.org/10.1201/9780203751305-4
Autor:
Rafik Addou, Arto Aho, Aaron M. Andrews, Richardella Anthony, Donat J. As, Vitaliy Avrutin, Gavin R. Bell, Sergio Bietti, Victor Blinov, Andrea Castellano, Laurent Cerutti, Kevin Clark, Charles Cornet, Mickaël Da Silva, Phillip Dang, Hermann Detz, Molly Doran, Olivier Durand, Stephen Farrell, I.A. Fischer, Everett Fraser, Alex Freundlich, Alexandre Garreau, Mircea Guina, Teemu Hakkarainen, Drew Hanser, Isaac Hernández-Calderón, Christopher L. Hinkle, Yoshiji Horikosh, Alex Ignatiev, Sergey V. Ivanov, Roland Jäger, Valentin N. Jmerik, Shane R. Johnson, Yung-Chung Kao, Nobuyuki Koguchi, Xufeng Kou, Jenn-Ming Kuo, Naohiro Kuze, François Lelarge, Christophe Levallois, Juan Li, Wei Li, Klaus Lischka, Joao Marcelo Jordao Lopes, Donald MacFarland, Karine Madiomanana, Matthew Marek, Zetian Mi, Hadis Morkoç, Maksym Myronov, Grégoire Narcy, Dmitrii V. Nechaev, Tianxiao Nie, Alexander Nikiforov, Jiro Nishinaga, Samarth Nitin, Gang Niu, Kunishige Oe, M. Oehme, Mark O’Steen, Ümit Özgür, Oleg Pchelyakov, Paul Pinsukanjana, Dmitry Pridachin, Eric Readinger, Jean-Baptiste Rodriguez, Guillaume Saint-Girons, Stefano Sanguinetti, Stephen T. Schaefer, Achim Schöll, Andreas Schramm, Frank Schreiber, Werner Schrenk, J. Schulze, Irina V. Sedova, Arvind J. Shalindar, Aidong Shen, Ichiro Shibasaki, Leonid Sokolov, Sergey V. Sorokin, Gunther Springholz, Gottfried Strasser, Jianshi Tang, Eric Tournié, Kevin Vargason, Dominique Vignaud, Jukka Viheriälä, Bertrand Vilquin, Suresh Vishwanath, Robert M. Wallace, Lee A. Walsh, Kang L. Wang, Shu M. Wang, Preston T. Webster, Huili G. Xing, Faxian Xiu, Masahiro Yoshimoto, Tobias Zederbauer, Songrui Zhao
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906b622bf9aa2dc954e18d9ee0b85c6b
https://doi.org/10.1016/b978-0-12-812136-8.00049-9
https://doi.org/10.1016/b978-0-12-812136-8.00049-9
Publikováno v:
AIP Conference Proceedings.
The close coincidence at low temperatures of the HeCd blue laser line (442 nm, Elaser = 2.808 eV) with the ZnSe bandgap, Eg = 2.821 eV, and with the excitonic emission at ∼2.80 eV, allows the observation of peculiar effects during photoluminescence