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Autor:
Zimeng Zhang, Isaac Craig, Tao Zhou, Martin Holt, Raul Flores, Evan Sheridan, Katherine Inzani, Xiaoxi Huang, Joyeeta Nag, Bhagwati Prasad, Sinéad M. Griffin, Ramamoorthy Ramesh
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract As a promising candidate for nonvolatile memory devices, the hafnia‐based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obst
Externí odkaz:
https://doaj.org/article/e0256f078d8e4fdcbd4ff809ef10f3a4