Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Isa Menous"'
Autor:
Afaf Brik, Bedra Benyahia, Brahim Mahmoudi, Amar Manseri, Faïza Tiour, Isa Menous, Amine Mefoued, Abdelkader Guenda
Publikováno v:
Silicon. 14:8417-8425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbbfa6c2c53ff2662a5aa6134c1e65ef
https://doi.org/10.1007/s12633-021-01636-w
https://doi.org/10.1007/s12633-021-01636-w
Autor:
Abdelkader Guenda, Lakhdar Guerbous, Faiza Tiour, Brahim Mahmoudi, Bedra Benyahia, Isa Menous, Rachid Chaoui, Amine Mefoued
Publikováno v:
Journal of Nano Research. 49:163-173
In this work, Hydrogenated silicon rich nitride (SRN) films were deposited by varying NH3/SiH4 ratio and thermally annealed within the temperature range of 700-1000 °C in N2 ambient to precipitate silicon nanocrystals in the film. The optical and st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a6ce6e9b4a95bb64ae9c729cd3773a8
https://doi.org/10.4028/www.scientific.net/jnanor.49.163
https://doi.org/10.4028/www.scientific.net/jnanor.49.163
Autor:
G. Nezzal, Y. Belkacem, Mohamed Kechouane, Lakhdar Guerbous, Noureddine Gabouze, A. Boukezzata, Aissa Keffous, A. Cheriet, S. Kaci, Isa Menous, Amer Brighet, A. Manseri, Hamid Menari
Publikováno v:
Modern Physics Letters B. 24:2101-2112
Hydrogenated amorphous SiC films ( a - Si 1-x C x: H ) were prepared by DC magnetron sputtering technique on p type Si (100) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6 H - SiC ). The deposited film a - Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7204da5c3746b65c03b756fda4f1c20e
https://doi.org/10.1142/s0217984910024262
https://doi.org/10.1142/s0217984910024262
Autor:
Rabah Cherfi, A. Boukezzata, Noureddine Gabouze, Amer Brighet, A. Cheriet, Aissa Keffous, Y. Belkacem, Yacine Boukennous, Lakhdar Guerbous, Hamid Menari, Isa Menous, Mohamed Kechouane
Publikováno v:
Applied Surface Science. 256:4591-4595
Hydrogenated amorphous SiC films (a-Si1−xCx:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H–SiC). The deposited a-Si1−xCx:H film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40ea0d628388d6ed46408aab686f067c
https://doi.org/10.1016/j.apsusc.2010.02.054
https://doi.org/10.1016/j.apsusc.2010.02.054