Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Irving Weinberg"'
Autor:
Irving Weinberg
We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501dc42fcc54afb2729578241c3079b1
https://doi.org/10.2172/1122933
https://doi.org/10.2172/1122933
Autor:
Irving Weinberg
Publikováno v:
Solar Cells. 31:331-348
The effects of radiation on InP solar cells is reviewed. Included are: a performance overview comparing InP, GaAs and silicon cells under laboratory irradiations, space flight data, defect studies using both electron paramagnetic resonance and deep l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c784f76843dfddebd84fe89d28eae3e
https://doi.org/10.1016/0379-6787(91)90104-w
https://doi.org/10.1016/0379-6787(91)90104-w
Autor:
Irving Weinberg
Publikováno v:
Solar Cells. 29:225-244
The present state of the art in InP solar cell research is reviewed. A Historical introduction is followed by reviews of cell modelling and processing efforts, demonstrated performance, the effects of electron, proton and gamma irradiations, annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca8035083727c70c6b8a02c9bcaacc2
https://doi.org/10.1016/0379-6787(90)90029-5
https://doi.org/10.1016/0379-6787(90)90029-5
Publikováno v:
Proceedings of the 25th Intersociety Energy Conversion Engineering Conference.
Recent research efforts, representing new directions in InP solar cell research, are reviewed. These include heteroepitaxial growth on silicon and gallium arsenide substrates, V-grooved cells, large area high efficiency cells and surface passivation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe9d4be643149c4d681320353dbed88b
https://doi.org/10.1109/iecec.1990.716962
https://doi.org/10.1109/iecec.1990.716962
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing on the performance of InP solar cells. For carrier removal, the num
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11537ada9577e5873528210006255625
https://doi.org/10.1109/iciprm.1992.235644
https://doi.org/10.1109/iciprm.1992.235644
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
InP solar cells, epitaxially grown on GaAs substrates with intervening Ga/sub x/In/sub 1-x/As layers, were irradiated by protons over a range of energies from 10 to 0.5 MeV. Cell performance, temperature dependencies and carrier removal were determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7684d7dfecc3ed299728031741d817
https://doi.org/10.1109/iciprm.1993.380670
https://doi.org/10.1109/iciprm.1993.380670
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
The authors report on the effect of 0.5 and 3.0 MeV proton irradiation on the base diffusion length of InP cells grown on GaAs substrates with In/sub x/Ga/sub 1-x/As graded intermediate layers (C. J. Keavney et al., 1991). The cell efficiency changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e11633ad0c3860d03a80b9392b66f76
https://doi.org/10.1109/iciprm.1993.380625
https://doi.org/10.1109/iciprm.1993.380625
Autor:
David Scheiman, David J. Brinker, Carlos Vargas-Aburto, Raj K. Jain, Irving Weinberg, C. K. Swartz
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Indium phosphide solar cells are known to be significantly more radiation resistant than either gallium arsenide or silicon. Their growth by heteroepitaxy offers additional advantages over growth by homoepitaxy. InP cells have been grown on lower cos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb4462e95b79025c5319f62ff109cc2
https://doi.org/10.1109/wcpec.1994.521638
https://doi.org/10.1109/wcpec.1994.521638
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e252899c2f4ab27b4ed1329db7c1296
https://doi.org/10.1109/wcpec.1994.520547
https://doi.org/10.1109/wcpec.1994.520547
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
Ga/sub 0.47/In/sub 0.53/As space power solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc79de92dca864faae30f5e20514f9df
https://doi.org/10.1109/wcpec.1994.521653
https://doi.org/10.1109/wcpec.1994.521653