Microwave driven synthesis of narrow bandgap alpha-tin nanoparticles on silicon

Autor: Mazzetta, I., Viti, L., Rigoni, F., Quaranta, S., Gasparotto, A., Barucca, G., Palma, F., Riello, P., Cattaruzza, E., Asgari, M., Vitiello, M., Irrera, F.

Publikováno v: In Materials & Design May 2022 217

Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress

Autor: Lorenzi, P., Rao, R., Irrera, F.

Publikováno v: In Microelectronics Reliability August-September 2015 55(9-10):1446-1449

Multisensor Integrated Platform Based on MEMS Charge Variation Sensing Technology for Biopotential Acquisition.

Autor: Irrera F; Department of Information Engineering, Electronics and Telecommunications, Sapienza University of Rome, 00185 Rome, Italy., Gumiero A; STMicroelectronics Agrate, 20864 Agrate Brianza, Italy., Zampogna A; Department of Human Neurosciences, Sapienza University of Rome, 00185 Rome, Italy., Boscari F; Department of Medicine, University of Padua, 35122 Padua, Italy., Avogaro A; Department of Medicine, University of Padua, 35122 Padua, Italy., Gazzanti Pugliese di Cotrone MA; Department of Information Engineering, Electronics and Telecommunications, Sapienza University of Rome, 00185 Rome, Italy., Patera M; Department of Human Neurosciences, Sapienza University of Rome, 00185 Rome, Italy., Della Torre L; STMicroelectronics Agrate, 20864 Agrate Brianza, Italy., Picozzi N; STMicroelectronics Agrate, 20864 Agrate Brianza, Italy., Suppa A; Department of Human Neurosciences, Sapienza University of Rome, 00185 Rome, Italy.; IRCCS Neuromed, 86077 Pozzilli, Italy.

Publikováno v: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Feb 28; Vol. 24 (5). Date of Electronic Publication: 2024 Feb 28.

Correlation between wearable inertial sensor data and standardised Parkinson’s disease axial impairment measures using machine learning

Autor: Borzi', L., Manoni, A., Zampogna, A., Irrera, F., Suppa, A., Olmo, G.

Publikováno v: 2022 IEEE 21st Mediterranean Electrotechnical Conference (MELECON).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e48a596eedbc578cc3d8b9b3b033e36
https://doi.org/10.1109/melecon53508.2022.9843018

T-shaped shallow trench isolation with unfilled floating void

Autor: Irrera, F., Puzzilli, G., Ricci, L., Russo, F., Stirpe, F.

Publikováno v: In Solid State Electronics August 2008 52(8):1188-1192