Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Ironside, C. N."'
Autor:
Nshii, C. C., Vangeleyn, M., Cotter, J. P., Griffin, P. F., Hinds, E. A., Ironside, C. N., See, P., Sinclair, A. G., Riis, E., Arnold, A. S.
Publikováno v:
Nature Nanotechnology 8, 321 (2013)
Laser cooled atoms are central to modern precision measurements. They are also increasingly important as an enabling technology for experimental cavity quantum electrodynamics, quantum information processing and matter wave interferometry. Although s
Externí odkaz:
http://arxiv.org/abs/1311.1011
The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an unipolar InGaAlAs
Externí odkaz:
http://arxiv.org/abs/physics/0504006
Autor:
Figueiredo, J. M. L., Boyd, A. R., Stanley, C. R., Ironside, C. N., McMeekin, S. G., Leite, A. M. P.
Publikováno v:
Appl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999)
We report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field acro
Externí odkaz:
http://arxiv.org/abs/physics/0503152
Publikováno v:
Appl. Phys. Lett., 74, 9, pp. 1197-1199 (Mar. 1999).
We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide transmission lin
Externí odkaz:
http://arxiv.org/abs/physics/0503140
Publikováno v:
Journal Modern Optics, 49, 5, pp. 939 - 945 (Abri 2002).
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the
Externí odkaz:
http://arxiv.org/abs/physics/0503098
Publikováno v:
IEEE Journal of Quantum Electronics, 37, 12, pp. 1547-1552 (Dez. 2001).
The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device po
Externí odkaz:
http://arxiv.org/abs/cond-mat/0503295
Autor:
Aleshkin, V. Ya., Reggiani, L., Alkeev, N. V., Lyubchenko, V. E., Ironside, C. N., Figueiredo, J. M. L., Stanley, C. R.
We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the region of t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304077
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Applied Physics; 6/15/2004, Vol. 95 Issue 12, p8258-8263, 6p, 2 Diagrams, 5 Graphs