Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Iriya Muneta"'
Autor:
Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 15-21 (2023)
In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum
Externí odkaz:
https://doaj.org/article/78132e64be9f473e9a8658ead202977e
Autor:
Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Layered materials, such as graphene and transition metal dichalcogenides, are able to obtain new properties and functions through the modification of their crystal arrangements. In particular, ferromagnetism in polycrystalline MoS2 is of gre
Externí odkaz:
https://doaj.org/article/dda183a6676b4b4b9870a3757832d4df
Autor:
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1117-1124 (2021)
A layered polycrystalline WS2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its $p$ MISFET is successfully demonstrated with TiN/HfO2 top-gate stack, TiN contact, and ultra-thin body and box technologie
Externí odkaz:
https://doaj.org/article/11cee9fddb4246718e11886e469a32ab
Autor:
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kakushima Kuniyuki, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)
Low-carrier density and high-crystallinity molybdenum disulfide (MoS2) films were fabricated by low-temperature and clean process based on a UHV RF sputtering system. This paper focuses on improving crystallinity and reducing the number of sulfur def
Externí odkaz:
https://doaj.org/article/8479b4f0da7940ff8104e132b5edfd81
Autor:
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)
A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film
Externí odkaz:
https://doaj.org/article/19a6e270e1e647a884d4be0a8c15582f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)
In this paper, we investigated the source/drain recessed contact structure to mitigate the self-heating-effects in vertically stacked-nanowire FETs. As a result, lattice temperature of nanowire regions during device operation was considerably decreas
Externí odkaz:
https://doaj.org/article/ce1ee70626f74aaeaca5484246517df9
Autor:
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two
Externí odkaz:
https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Reduction of power consumption for magnetization reversal in spintronic memory devices is of great importance. Here, Munetaet al. report the gate electric-field assisted control of the magnetic anisotropy of the density of states using quantum size e
Externí odkaz:
https://doaj.org/article/c3d93914213244d0bea559af94fe9baa
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa6f95ce47e9f65756492ce6acf48c56
https://doi.org/10.1109/edtm55494.2023.10103043
https://doi.org/10.1109/edtm55494.2023.10103043
Autor:
Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b5b6eed801e575c96dc8766cd60cac
https://doi.org/10.1109/edtm55494.2023.10103089
https://doi.org/10.1109/edtm55494.2023.10103089