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pro vyhledávání: '"Iris Sabo-Napadesky"'
Autor:
Paz Or, T. R. Devidas, Takashi Taniguchi, Kenji Watanabe, Iris Sabo-Napadesky, Sharon May-Tal Beck, Guy Ron, Hadar Steinberg
Publikováno v:
Review of Scientific Instruments. 93:015002
We utilize a high-mobility double-gated graphene field-effect transistor to measure the accumulated charge created by positron annihilation in its back-gate. The device consists of an exfoliated graphene flake stacked between two hexagonal boron nitr