Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Irina G. Dyachkova"'
Autor:
Victor E. Asadchikov, Irina G. Dyachkova, Denis A. Zolotov, Yuri S. Krivonosov, Vladimir T. Bublik, Alexander I. Shikhov
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 1, Pp 13-19 (2019)
The quality and structural perfection of single crystal silicon have been studied using double-crystal X-ray diffraction after hydrogen ion implantation and thermal annealing used in a number of semiconductor technologies. The fundamental difference
Externí odkaz:
https://doaj.org/article/05a9d3f372284ce499035a995aa1cece
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 1, Pp 29-32 (2016)
Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime
Externí odkaz:
https://doaj.org/article/ad047768cd084f95be47b007cfd781d5
Autor:
Inna Bukreeva, Olga Junemann, Alessia Cedola, Francesco Brun, Elena Longo, Giuliana Tromba, Fabian Wilde, Marina V. Chukalina, Yuri S. Krivonosov, Irina G. Dyachkova, Alexey V. Buzmakov, Denis A. Zolotov, Francesca Palermo, Giuseppe Gigli, Dmitry A. Otlyga, Sergey V. Saveliev, Michela Fratini, Victor E. Asadchikov
Publikováno v:
Medical Physics. 50:1601-1613
The formation of concrements in human pineal gland (PG) is a physiological process and, according to many researchers, is associated with the involution of PG structures. The majority of scientific publications concern progressive calcification of PG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bfd3303e2b971c6d91f29133a4c29fa
https://doi.org/10.1002/mp.16080
https://doi.org/10.1002/mp.16080
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 1, Pp 29-32 (2016)
Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af6cf0ab14ad5c3286bc285b500127d3