Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Irfan Ahmad Pindoo"'
Publikováno v:
Silicon. 13:3209-3215
Tunnel Field Effect Transistor (TFET) is one of the most promising alternative device for semiconductor technology and shows better performance as compared to the conventional MOS device in terms of subthreshold swing, OFF current, etc. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25276e03bba3364c53a70de389887c46
https://doi.org/10.1007/s12633-020-00674-0
https://doi.org/10.1007/s12633-020-00674-0
Publikováno v:
Radioelectronics and Communications Systems; Vol. 63 No. 6 (2020): Nanoelectronics and Medical Engineering; 308-318
Radioelectronics and Communications Systems; Том 63 № 6 (2020): Nanoelectronics and Medical Engineering; 308-318
Radioelectronics and Communications Systems; Том 63 № 6 (2020): Nanoelectronics and Medical Engineering; 308-318
The use of bio-medical applications and bio-inspired computing facilitates the diagnosis of human health. The main work of bio-medical applications relies mostly over the biosensors. Biosensor construction are based on piezoelectric, chemical, optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2ca96741853dfdf40ecef82b5641f58
https://doi.org/10.3103/s0735272720060047
https://doi.org/10.3103/s0735272720060047
Publikováno v:
Applied Physics A. 127
In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source capacitance (CGS), gate-drain capacitance (CGD), cut-off frequency (fT),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45abfe03f363c77e353750abdfb52a7
https://doi.org/10.1007/s00339-021-04891-1
https://doi.org/10.1007/s00339-021-04891-1
Publikováno v:
2021 Devices for Integrated Circuit (DevIC).
This paper presents a tunnel field effect transistor (TFET) as an alternative to suppress the effect of temperature on device performance. The device used is SiGe based heterojunction TFET with a hetero-dielectric buried oxide layer. We have analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8055707a1a7e3ddfb68ca3b698e78fc
https://doi.org/10.1109/devic50843.2021.9455857
https://doi.org/10.1109/devic50843.2021.9455857
Publikováno v:
2021 2nd International Conference on Intelligent Engineering and Management (ICIEM).
The internet of things is one of the world's fastest-growing technologies. Sensors, computers, software, and projects are all implemented using this technology on various platforms. The primary goal is to make the procedure more intelligent and user-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0894170078b58d43b99aa01c383caae1
https://doi.org/10.1109/iciem51511.2021.9445352
https://doi.org/10.1109/iciem51511.2021.9445352
In this paper, the analog/RF analysis of SiGe source-based heterojunction Tunnel FET is reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source capacitance (CGS), gate-drain capacitance (CGD), cut-off frequency (fT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9220c9c97a186710ad2d631c50803a6
https://doi.org/10.21203/rs.3.rs-298331/v1
https://doi.org/10.21203/rs.3.rs-298331/v1
Publikováno v:
2020 International Conference on Intelligent Engineering and Management (ICIEM).
Scaling of transistors has been a challenging task among researchers. The conventional TFETs do offer a solution to this problem. However, TFETs based on simple silicon material fail to obtain high ON current and suffer from an ambipolar conduction d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984b0247efd768dba841d5be01c94605
https://doi.org/10.1109/iciem48762.2020.9160161
https://doi.org/10.1109/iciem48762.2020.9160161
Publikováno v:
2019 International Conference on Cutting-edge Technologies in Engineering (ICon-CuTE).
In this paper, we have done the comparison of the performance of various TFET devices like Single gated, double gated, Homojunction and the Heterojunction. All the simulations have been performed on Cogenda Software. The analysis have been done in te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5655d43376705ff31997f22e95d0935
https://doi.org/10.1109/icon-cute47290.2019.8991467
https://doi.org/10.1109/icon-cute47290.2019.8991467
Publikováno v:
2018 International Conference on Intelligent Circuits and Systems (ICICS).
In this paper, we have addressed one very important issue of the unconventional adiabatic logic circuits. As compared to the bulk CMOs, the former has more delay which affects the performance. it has been aimed to reduce the delay of Two Phase Clocke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0f743905b2ba4aae196dac2fb514a1c
https://doi.org/10.1109/icics.2018.00040
https://doi.org/10.1109/icics.2018.00040
Publikováno v:
Indian Journal of Science and Technology. 9
In this paper, we have provided one of the solutions for achieving ultra-low power goals. The technique used is Subthreshold region operation. This technique is useful in the applications where speed is of the secondary importance, and the low power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e096ce43edbcf8bc46a6ecc4c2df487
https://doi.org/10.17485/ijst/2016/v9i48/106447
https://doi.org/10.17485/ijst/2016/v9i48/106447