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pro vyhledávání: '"Iretomiwa Esho"'
Autor:
Bekari Gabritchidze, Kieran Cleary, Jacob Kooi, Iretomiwa Esho, Anthony C. Readhead, Austin J. Minnich
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Autor:
Bekari Gabritchidze, Iretomiwa Esho, Kieran A. Cleary, Anthony C. Readhead, Austin J. Minnich
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76c1c6c18b7ed692b11b3c0a55cf178e
http://arxiv.org/abs/2105.11571
http://arxiv.org/abs/2105.11571
Publikováno v:
Journal of Applied Physics. 131:085111
High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the
Publikováno v:
Applied Thermal Engineering. 145:287-294
Li-ion cells are widely used for electrochemical energy conversion and storage, but suffer from safety problems due to overheating. At elevated temperatures, the cell enters a state of thermal runaway involving multiple heat-generating decomposition