Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Irene Popova"'
Autor:
Richard F. Indyk, Joseph M. Sullivan, Victoria L. Calero-DdelC, Aaron Bicknell, Irene Popova, John A. Fitzsimmons
Publikováno v:
International Symposium on Microelectronics. 2013:000672-000677
The continued challenge to keep up with Moore's law with aggressive device scaling, and shrinking wiring dimensions established perpetual need for novel materials and dictates ever tighter semiconductor process fidelity. Despite large progress with r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71cae894b8589832fae54fe9c33b7024
https://doi.org/10.4071/isom-2013-wp27
https://doi.org/10.4071/isom-2013-wp27
Autor:
James F. Cameron, Irene Popova, Kevin O'Shea, Hiroaki Kitaguchi, David Valeri, John P. Amara, Yoshihiro Yamamoto, Jin Wuk Sung, Pushkara Rao Varanashi, Libor Vyklicky, Adam Ware
Publikováno v:
Journal of Photopolymer Science and Technology. 23:721-729
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76baf3284a18de2e05b58b63122159b1
https://doi.org/10.2494/photopolymer.23.721
https://doi.org/10.2494/photopolymer.23.721
Autor:
Kevin O'Shea, Yoshihiro Yamamoto, Jin Wuk Sung, Libor Vyklicky, Pushkara Rao Varanasi, George G. Barclay, Irene Popova, James F. Cameron, Jason A. DeSISTO, Manabu Hidano, Johan Amara, David Valeri, Vaishali R. Vohra, Greg Prokopowicz, Adam Ware, Tomoki Kurihara, Kathleen M. O'Connell, Wu-Song Huang
Publikováno v:
Journal of Photopolymer Science and Technology. 22:17-24
A new family of materials has been developed to serve as a wet-developable bottom antireflective coating (D-BARC) for patterning levels that have a strong need to avoid dry-etch processes for BARC-open steps. Such include some implant levels, where d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c1c025ab30f31631633756506e17c2
https://doi.org/10.2494/photopolymer.22.17
https://doi.org/10.2494/photopolymer.22.17
Autor:
Ranee Wai-Ling Kwong, Sen Liu, W. Li. Khojasteh, P. R. Varanasi, Rex Chen, Irene Popova, Margaret C. Lawson
Publikováno v:
Journal of Photopolymer Science and Technology. 20:481-491
The combination of immersion lithography and reticle enhancement techniques (RETs) has extended 193nm lithography into the 45nm node and possibly beyond. In order to fulfill the tight pitch and small critical dimension requirements of these future te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa58018c3949dd96f32a669f3bd26fdf
https://doi.org/10.2494/photopolymer.20.481
https://doi.org/10.2494/photopolymer.20.481
Autor:
Michael J. Bronikowski, Irene Popova, Henry H. Hwu, Jie Liu, Richard E. Smalley, Chad B. Huffman, John T. Yates, Jingguang G. Chen, Anya Kuznetsova
Publikováno v:
Journal of the American Chemical Society. 123:10699-10704
Single-walled nanotubes (SWNTs) produced by plasma laser vaporization (PLV) and containing oxidized surface functional groups have been studied for the first time with NEXAFS. Comparisons are made to SWNTs made by catalytic synthesis over Fe particle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52ed98ee7b1f652f9b01c4418f5992f9
https://doi.org/10.1021/ja011021b
https://doi.org/10.1021/ja011021b
Autor:
John T. Yates, Irene Popova
Publikováno v:
Langmuir. 13:6169-6175
Adsorption experiments for benzotriazole, (BTAH) on the γ-Al2O3 surface were carried out at 150 and 293 K. The thermal stability of the adsorbed layer was investigated. At low temperatures, adsorption results in the production of a thick condensed l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7f78b4b4bf9dad0d7f8c7900c3215a
https://doi.org/10.1021/la970618v
https://doi.org/10.1021/la970618v
Autor:
Irene Popova, Cheol Kim, Bidan Zhang, Chan Sam Chang, H. Kry, T. Murakami, S. Holmes, J. M. Gomez, Shinichiro Nakagawa
Publikováno v:
SPIE Proceedings.
Historically, the block layers are considered "non critical ", as ones requiring less challenging ground rules. However, continuous technology-driven scaling has brought these layers to a point, where resolution, tolerance and aspect ratio issue of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0292ecd913018296aeb84da95d24e081
https://doi.org/10.1117/12.879866
https://doi.org/10.1117/12.879866
Autor:
James F. Cameron, Hiroaki Kitaguchi, Jin Wuk Sung, Irene Popova, Adam Ware, Pushkara Rao Varanasi, Sabrina Wong, Yoshihiro Yamamoto, Ranee Kwong, S. Holmes, Libor Vyklicky
Publikováno v:
SPIE Proceedings.
As patterning of implant layers becomes increasingly challenging it is clear that the standard resist/Top Antireflective Coating (TARC) process may be soon be limited in terms of its ability to meet implant targets at future nodes. A particularly att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e1a26acd39607b5ab584ab24445d2c1
https://doi.org/10.1117/12.881614
https://doi.org/10.1117/12.881614
Publikováno v:
SPIE Proceedings.
Implant level photolithography processes are becoming more challenging each node due to everdecreasing CD and resist edge placement requirements, and the technical challenge is exacerbated by the business need to develop and maintain low-cost process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::489e079f581cf237b6095a1a04692ae7
https://doi.org/10.1117/12.865134
https://doi.org/10.1117/12.865134
Autor:
Jin Wuk Sung, Pushkara Rao Varanasi, Hiroaki Kitaguchi, James F. Cameron, Kevin O'Shea, Yoshihiro Yamamoto, Adam Ware, Irene Popova, John P. Amara, Libor Vyklicky, David Valeri
Publikováno v:
SPIE Proceedings.
As device scaling continues according to Moore's Law, an ongoing theme in the semiconductor industry is the need for robust patterning solutions for advanced device manufacture. One particularly attractive solution for implant lithography is the use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb16a1c3ddd6cd3636af002a47ced28
https://doi.org/10.1117/12.846708
https://doi.org/10.1117/12.846708