Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Irene Olivares"'
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-8 (2021)
The non-volatile memory is a crucial functionality for a wide range of applications in photonic integrated circuits, however, it still poses a challenge in silicon photonic technology. This problem has been overcome in the microelectronic industry by
Externí odkaz:
https://doaj.org/article/074ef95045234702aa967018d69feb98
On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-opt
Externí odkaz:
https://doaj.org/article/9b5224f63e73455aa824fe69d58a8a21
Autor:
David González-Andrade, Irene Olivares, Raquel Fernández de Cabo, Jaime Vilas, Antonio Dias, Aitor V. Velasco
Mode-division multiplexing has emerged as a promising route for increasing transmission capacity while maintaining the same level of on-chip integration. Despite the large number of on-chip mode converters and multiplexers reported for the silicon-on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be04c7fbd8a1d81162f5a115ce441e1e
https://zenodo.org/record/7878725
https://zenodo.org/record/7878725
Autor:
David González-Andrade, Raquel Fernández de Cabo, Jaime Vilas, Thi Thuy Duong Dinh, José Manuel Luque-González, Dorian Oser, Guy Aubin, Farah Amar, Diego Pérez-Galacho, Irene Olivares, Antonio Dias, Robert Halir, Alejandro Ortega-Moñux, J. Gonzalo Wangüemert-Pérez, Íñigo Molina-Fernández, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, Laurent Vivien, Aitor V. Velasco, Carlos Alonso-Ramos
Publikováno v:
Smart Photonic and Optoelectronic Integrated Circuits 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbe0216da31ee32baa9583c4f656459
https://doi.org/10.1117/12.2649751
https://doi.org/10.1117/12.2649751
Autor:
Pablo Sanchis, Irene Olivares
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[EN] Strained silicon was proposed more than a decade ago promising to revolutionize the silicon photonics field by allowing efficient modulation in this platform. Despite all the efforts, still rather low chi(2) values have been measured in strained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85561ad21eda6069d8197b83267164cf
https://doi.org/10.1109/lpt.2021.3075753
https://doi.org/10.1109/lpt.2021.3075753
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
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[ES] En la última década, la plataforma de silicio ha emergido como la plataforma por excelencia para desarrollar circuitos fotónicos integrados debido a su versatilidad, la posibilidad de miniaturización y de una producción de bajo coste y a gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a1d616600d448765629df669e25cac3
https://doi.org/10.4995/thesis/10251/167055
https://doi.org/10.4995/thesis/10251/167055
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-8 (2021)
instname
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-8 (2021)
[EN] The non-volatile memory is a crucial functionality for a wide range of applications in photonic integrated circuits, however, it still poses a challenge in silicon photonic technology. This problem has been overcome in the microelectronic indust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::061ad45980bbe367b8db8a41a46d1921
Autor:
Pablo Sanchis, Irene Olivares
Publikováno v:
RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname
instname
[EN] A slot waveguide structure made of a SiGe/Si/SiGe heterojunction is proposed to enhance Pockels effect in strained silicon. The strain is applied via lattice mismatch between layers, while the slot configuration optimizes the overlap between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f9cf41286bdc59ba52096774fe10b6d
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
A 9.9-μm-long non-volatile silicon electro-optic switch is proposed based on the utilization of indium tin oxide (ITO) as a floating gate and by exploiting the ITO epsilon-near-zero (ENZ) regime in the telecom C-band.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b786f1a22f28e271cd3e3bd8e479a5d8
https://doi.org/10.1109/group4.2019.8853921
https://doi.org/10.1109/group4.2019.8853921
Autor:
Pablo Sanchis, Elena Pinilla-Cienfuegos, Roger Sanchis-Gual, Irene Olivares, Jorge O. Parra, Antoine Brimont, Ramón Torres-Cavanillas
Publikováno v:
ICTON
Electro-optical bistability is a functionality which can be crucial for a wide range of applications as it can enable non-volatile and ultra-low power switching performance. We investigate the integration of a molecular-based material presenting a Sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0cd329f5af78463333b033ac855fc8
https://doi.org/10.1109/icton.2019.8840509
https://doi.org/10.1109/icton.2019.8840509