Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Irene Aguilera"'
Autor:
Minh N. Bui, Stefan Rost, Manuel Auge, Jhih-Sian Tu, Lanqing Zhou, Irene Aguilera, Stefan Blügel, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Arsalan Hashemi, Hannu-Pekka Komsa, Lei Jin, Lidia Kibkalo, Eoghan N. O’Connell, Quentin M. Ramasse, Ursel Bangert, Hans C. Hofsäss, Detlev Grützmacher, Beata E. Kardynal
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-8 (2022)
Abstract In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2.
Externí odkaz:
https://doaj.org/article/8fae92d734494f999ea5315403e3a69a
Autor:
Oliver J. Clark, Friedrich Freyse, Irene Aguilera, Alexander S. Frolov, Andrey M. Ionov, Sergey I. Bozhko, Lada V. Yashina, Jaime Sánchez-Barriga
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-11 (2021)
Understanding the coupling between spin-polarised topological surface states and the bulk provides insight into ultrafast spin dynamics. Here, this coupling is shown to be accompanied by a large mass enhancement in the Sb(111) surface electronic stru
Externí odkaz:
https://doaj.org/article/e31f23ce0d1b450c8f1e1770c0ff6cbb
Autor:
Isabella Mantellini Gonzalez, Sime Rogic Valencia, Ines Borrego Soriano, Paula Vazquez Perez, Rosa Maria Garcia Moreno, Arturo Lisbona Catalan, Gumersindo Fernandez Vazquez, Oscar Moreno Dominguez, Beatriz Barquiel Alcala, Miriam Zapatero Larrauri, Maria Luisa Gonzalez Casaus, Irene Aguilera Garcia, Alexa Pamela Benitez Valderrama, Ines Lobo, Cristina Alvarez Escola, Patricia Martin Rojas-Marcos, Paola Parra Ramirez
Publikováno v:
Endocrine Abstracts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::573e1dbb25f3c65d070a252b11fe211a
https://doi.org/10.1530/endoabs.90.ep13
https://doi.org/10.1530/endoabs.90.ep13
Autor:
Lada V. Yashina, Alexander S. Frolov, Jaime Sánchez-Barriga, Andrey M. Ionov, F. Freyse, O. J. Clark, Irene Aguilera, S.I. Bozhko
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-11 (2021)
Communications Physics 4(1), 165 (2021). doi:10.1038/s42005-021-00657-6
Communications Physics 4(1), 165 (2021). doi:10.1038/s42005-021-00657-6
Topological phases of matter offer exciting possibilities to realize lossless charge and spin information transport on ultrafast time scales. However, this requires detailed knowledge of their nonequilibrium properties. Here, we employ time-, spin- a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93647d29410ed26f3efcb8dfa2e546a4
https://doaj.org/article/e31f23ce0d1b450c8f1e1770c0ff6cbb
https://doaj.org/article/e31f23ce0d1b450c8f1e1770c0ff6cbb
Autor:
Dmitrii Nabok, Murat Tas, Shotaro Kusaka, Engin Durgun, Christoph Friedrich, Gustav Bihlmayer, Stefan Blügel, Toru Hirahara, Irene Aguilera
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc3d51110fac34bc5094affb770c351
https://doi.org/10.1103/physrevmaterials.6.034204
https://doi.org/10.1103/physrevmaterials.6.034204
Publikováno v:
Advanced optical materials 10(13), 2101947 (2022). doi:10.1002/adom.202101947
Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bdc75039a92d89e3505fc9244d7e8b5
https://juser.fz-juelich.de/record/910215
https://juser.fz-juelich.de/record/910215
Autor:
Maryam Sajedi, Maxim Krivenkov, Dmitry Marchenko, Jaime Sánchez-Barriga, Anoop K. Chandran, Andrei Varykhalov, Emile D. L. Rienks, Irene Aguilera, Stefan Blügel, Oliver Rader
Publikováno v:
Physical review letters 128(17), 176405 (2022). doi:10.1103/PhysRevLett.128.176405
The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d120030b388df476a0788c443afcf36
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=107773
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=107773
Autor:
Cheng-Tai Kuo, Shih-Chieh Lin, Jean-Pascal Rueff, Zhesheng Chen, Irene Aguilera, Gustav Bihlmayer, Lukasz Plucinski, Ismael L. Graff, Giuseppina Conti, Ivan A. Vartanyants, Claus M. Schneider, Charles S. Fadley
Publikováno v:
Physical review / B 104(24), 245105 (2021). doi:10.1103/PhysRevB.104.245105
Physical review / B 104(24), 245105 (2021). doi:10.1103/PhysRevB.104.245105
In this work, we studied the bulk band structure of a topological insulator (TI) Bi$_2$Se$_3$ and determinedthe contributions of the Bi and Se orbital states to the vale
In this work, we studied the bulk band structure of a topological insulator (TI) Bi$_2$Se$_3$ and determinedthe contributions of the Bi and Se orbital states to the vale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5baf877941e0f978d31c10063668b10b
https://doi.org/10.1103/physrevb.104.245105
https://doi.org/10.1103/physrevb.104.245105
Publikováno v:
Physical review materials 5(9), L091201 (2021). doi:10.1103/PhysRevMaterials.5.L091201
While first-principles calculations with different levels of sophistication predict a topologically trivial ${\mathbb{Z}}_{2}$ state for bulk bismuth, some photoemission experiments show surface states consistent with the interpretation of bismuth be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de7a67ca84396eed928ff30e0b40605c
Publikováno v:
Materials advances 2(11), 3655-3670 (2021). doi:10.1039/D0MA00902D
Materials advances 2, 3655 (2021). doi:10.1039/D0MA00902D
Materials advances 2, 3655 (2021). doi:10.1039/D0MA00902D
Materials advances (2021). doi:10.1039/D0MA00902D
Published by Royal Society of Chemistry, Cambridge
Published by Royal Society of Chemistry, Cambridge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfc4d6b5363a3d6d26ae40ac132e70ed