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Autor:
Amol Joshi, Ira Lim, Zhendong Hong, Albert Lee, Abhijit Pethe, Salil Mujumdar, Mark Raymond, Shao-Ming Koh, Hiroaki Nimii, Sean Barstow, Guillaume Bouche, Nobi Fuchigami, Ashish Bodke, Paul R. Besser
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiO x insulator. For Ti-TiO x -n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiO x into Ti duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dd455d111ca2c3089a5ec135fb4119
https://doi.org/10.1109/snw.2014.7348552
https://doi.org/10.1109/snw.2014.7348552
