Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Ionut Girgel"'
Autor:
D.W.E. Allsopp, Philip A. Shields, Colin J. Humphreys, E. D. Le Boulbar, Christopher X. Ren, James T. Griffiths, P. M. Coulon, CG Bryce, Robert W. Martin, Ashley Howkins, Rachel A. Oliver, Ionut Girgel, Ian W. Boyd
Publikováno v:
Griffiths, J T, Ren, C X, Coulon, P M, Le Boulbar, E D, Bryce, C G, Girgel, I, Howkins, A, Boyd, I, Martin, R W, Allsopp, D W E, Shields, P A, Humphreys, C J & Oliver, R A 2017, ' Structural impact on the nanoscale optical properties of InGaN core-shell nanorods ', Applied Physics Letters, vol. 110, no. 17, 172105 . https://doi.org/10.1063/1.4982594
III-nitride core-shell nanorods are promising for the development of high efficiency light emitting diodes and novel optical devices. We reveal the nanoscale optical and structural properties of core-shell InGaN nanorods formed by combined top-down e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::064952fa974612a0fddaffec13b32fe1
Autor:
Duncan W. E. Allsopp, Philip A. Shields, Emmanuel Le Boulbar, Paul R. Edwards, Ionut Girgel, Robert W. Martin
Publikováno v:
Girgel, I, Edwards, P R, Le Boulbar, E, Allsopp, D W, Martin, R W & Shields, P A 2015, ' Investigation of facet-dependent InGaN growth for core-shell LEDs ', pp. 93631V . https://doi.org/10.1117/12.2077625
In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d3d0059ae577f2eeff88b3c169adc0f
https://doi.org/10.1117/12.2077625
https://doi.org/10.1117/12.2077625
Autor:
Duncan W. E. Allsopp, Christopher J. Lewins, Alexander Satka, Robert W. Martin, Philip A. Shields, Paul R. Edwards, Ionut Girgel, E. D. Le Boulbar
Publikováno v:
Le Boulbar, E D, Girgel, I, Lewins, C J, Edwards, P R, Martin, R W, Šatka, A, Allsopp, D W E & Shields, P A 2013, ' Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays ', Journal of Applied Physics, vol. 114, no. 9, 094302 . https://doi.org/10.1063/1.4819440
Journal of Applied Physics
Journal of Applied Physics
The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods is studied with and wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9c68150f4a2d26012a7762d0a9f4375
https://purehost.bath.ac.uk/ws/files/15223699/JApplPhys_114_094302.pdf
https://purehost.bath.ac.uk/ws/files/15223699/JApplPhys_114_094302.pdf
Autor:
Paul R. Edwards, Suman Lata Sahonta, Duncan W. E. Allsopp, Colin J. Humphreys, Emmanuel Le Boulbar, Robert W. Martin, Pierre-Marie Coulon, Ionut Girgel, Philip A. Shields
Publikováno v:
Journal of Nanophotonics. 10:016010
Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longi- tudinal axis aligned along the c-direction. These facets do not suffer f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a27dccf9f57fe2bdb209bf32bc9da68
https://doi.org/10.1117/1.jnp.10.016010
https://doi.org/10.1117/1.jnp.10.016010