Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Ion Vornicu"'
Autor:
Franco Bandi, Victor Ilisie, Ion Vornicu, Ricardo Carmona-Galán, José M. Benlloch, Ángel Rodríguez-Vázquez
Publikováno v:
Sensors, Vol 22, Iss 1, p 122 (2021)
Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are bui
Externí odkaz:
https://doaj.org/article/84162c4fb6314d7eac8b8d178c1d989b
Publikováno v:
Sensors, Vol 21, Iss 1, p 308 (2021)
In this paper, we present a proposed field programmable gate array (FPGA)-based time-to-digital converter (TDC) architecture to achieve high performance with low usage of resources. This TDC can be employed for multi-channel direct Time-of-Flight (To
Externí odkaz:
https://doaj.org/article/30317d09701f45389e098bdee7de3584
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 71:1-13
Autor:
Ion Vornicu, Franco N. Bandi, Ángel Rodríguez-Vázquez, Ricardo Carmona Galan, Juan Manuel Lopez-Martinez
Publikováno v:
IEEE Sensors Journal. 21:4776-4785
Single photon avalanche diodes (SPADs) featuring a high detection rate of near-IR photons are much desired for outdoor LiDAR based on direct time-of-flight (ToF). This article presents the complete design flow of a SPAD detector for LiDAR. First, the
Publikováno v:
IEEE Sensors Journal. 20:12817-12826
High-density digital-Silicon Photomultipliers call for high-performance Single Photon Avalanche Diodes (SPAD) front-ends. Power consumption and fill factor are significant concerns in this kind of sensors. This paper presents a compact and power-effi
Publikováno v:
EBCCSP
This paper presents a new approach for dead-time minimization while preserving low resource usage and high resolution in FPGA-based time-to-digital (TDC) converters. The proposed TDC architecture can be employed in applications in which many events n
Publikováno v:
Sensors, Vol 17, Iss 5, p 1072 (2017)
The design of a direct time-of-flight complementary metal-oxide-semiconductor (CMOS) image sensor (dToF-CIS) based on a single-photon avalanche-diode (SPAD) array with an in-pixel time-to-digital converter (TDC) must contemplate system-level aspects
Externí odkaz:
https://doaj.org/article/55a1fb79918641d886c984f23a4044a7
Publikováno v:
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
Sensors
Volume 21
Issue 1
Sensors, Vol 21, Iss 308, p 308 (2021)
Sensors (Basel, Switzerland)
Digital.CSIC. Repositorio Institucional del CSIC
idUS: Depósito de Investigación de la Universidad de Sevilla
Universidad de Sevilla (US)
instname
Sensors
Volume 21
Issue 1
Sensors, Vol 21, Iss 308, p 308 (2021)
Sensors (Basel, Switzerland)
Digital.CSIC. Repositorio Institucional del CSIC
idUS: Depósito de Investigación de la Universidad de Sevilla
Universidad de Sevilla (US)
© 2021 by the authors.
In this paper, we present a proposed field programmable gate array (FPGA)-based timeto- digital converter (TDC) architecture to achieve high performance with low usage of resources. This TDC can be employed for multi-chan
In this paper, we present a proposed field programmable gate array (FPGA)-based timeto- digital converter (TDC) architecture to achieve high performance with low usage of resources. This TDC can be employed for multi-chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18ac32c4b3a29dcb9dd128ea992bbfa4
Publikováno v:
ISCAS
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
This paper presents a FPGA implementation of a novel depth map estimation algorithm for direct time-of-flight CMOS image sensors (dToF-CISs) based on single-photon avalanche-diodes (SPADs). Conventional ToF computation algorithms rely on complete ToF
Publikováno v:
idUS. Depósito de Investigación de la Universidad de Sevilla
instname
ESSDERC
instname
ESSDERC
Photon detection at longer wavelengths is much desired for LiDAR applications. Silicon photodiodes with deeper junctions and larger multiplication regions are in principle more sensitive to near-IR photons. This paper presents the complete electro-op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a18ad03b51525563344eff7eb0b60a92