Zobrazeno 1 - 10
of 238
pro vyhledávání: '"Ioana Pintilie"'
Autor:
Georgia A. Boni, Lucian D. Filip, Cristian Radu, Cristina Chirila, Iuliana Pasuk, Mihaela Botea, Ioana Pintilie, Lucian Pintilie
Publikováno v:
Electronic Materials, Vol 3, Iss 4, Pp 344-356 (2022)
Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large tempera
Externí odkaz:
https://doaj.org/article/dcdb1f9cb1bb46b8852cbe12352b67bb
Autor:
Mihaela Botea, Cristina Chirila, Georgia Andra Boni, Iuliana Pasuk, Lucian Trupina, Ioana Pintilie, Luminiţa Mirela Hrib, Becherescu Nicu, Lucian Pintilie
Publikováno v:
Electronic Materials, Vol 3, Iss 2, Pp 173-184 (2022)
The ferroelectric and pyroelectric properties of bismuth ferrite (BFO) epitaxial thin film have been investigated. The ferroelectric epitaxial thin layer has been deposited on strontium titanate (STO) (001) substrate by pulsed laser deposition, in a
Externí odkaz:
https://doaj.org/article/85a9e5556b264c74949bdd213188bf29
Autor:
Cristina Florentina Chirila, Viorica Stancu, Georgia Andra Boni, Iuliana Pasuk, Lucian Trupina, Lucian Dragos Filip, Cristian Radu, Ioana Pintilie, Lucian Pintilie
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Fe (acceptor) and Nb (donor) doped epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) films were grown on single crystal SrTiO3 substrates and their electric properties were compared to those of un-doped PZT layers deposited in similar conditions. All the fil
Externí odkaz:
https://doaj.org/article/e34ff1305089492b820ad5b0eb21dff8
Publikováno v:
Sensors, Vol 23, Iss 12, p 5725 (2023)
The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical
Externí odkaz:
https://doaj.org/article/5c5e3a45f2c14aac9f85bc6f775439f6
Autor:
Mihaela Botea, Ioana Pintilie, Vasile-Adrian Surdu, Cătălina-Andreea Stanciu, Roxana-Doina Truşcă, Bogdan Ştefan Vasile, Roxana Patru, Adelina-Carmen Ianculescu, Lucian Pintilie
Publikováno v:
Journal of Materials Research and Technology, Vol 12, Iss , Pp 2085-2103 (2021)
Graded structures with different architectures were obtained by spark plasma sintering from (Ba1-xSrx)TiO3 (BST, x = 0.10; 0.20; 0.30) powders. The presence of the composition gradient was confirmed by structural and compositional investigations usin
Externí odkaz:
https://doaj.org/article/0209e6ea09454f92a96bd195509b05bb
Autor:
Mihaela Botea, Ioana Pintilie, Vasile-Adrian Surdu, Cătălina-Andreea Stanciu, Roxana-Doina Truşcă, Bogdan Ştefan Vasile, Roxana Patru, Mircea Udrea, Adelina-Carmen Ianculescu, Lucian Pintilie
Publikováno v:
Journal of Materials Research and Technology, Vol 13, Iss , Pp 1323- (2021)
Externí odkaz:
https://doaj.org/article/866fcbb522a64bd8ba1543b7bf18b2ff
Autor:
Cristina Florentina Chirila, Viorica Stancu, Georgia Andra Boni, Iuliana Pasuk, Lucian Trupina, Lucian Dragos Filip, Cristian Radu, Ioana Pintilie, Lucian Pintilie
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/6d9cfb5d17db4193b4042987ec957950
Autor:
Nicolae Filipoiu, Tudor Luca Mitran, Dragos Victor Anghel, Mihaela Florea, Ioana Pintilie, Andrei Manolescu, George Alexandru Nemnes
Publikováno v:
Energies, Vol 14, Iss 17, p 5431 (2021)
The feasibility of mixed-cation mixed-halogen perovskites of formula AxA’1−xPbXyX’zX”3−y−z is analyzed from the perspective of structural stability, opto-electronic properties and possible degradation mechanisms. Using density functional
Externí odkaz:
https://doaj.org/article/1bd83d852519429b825c9b038f6f7283
Autor:
Lucian Pintilie, Georgia Andra Boni, Cristina Florentina Chirila, Viorica Stancu, Lucian Trupina, Cosmin Marian Istrate, Cristian Radu, Ioana Pintilie
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2124 (2021)
Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are form
Externí odkaz:
https://doaj.org/article/59c2259e50114eafb6c79b4535b0fe24
Autor:
Roxana E. Patru, Hamidreza Khassaf, Iuliana Pasuk, Mihaela Botea, Lucian Trupina, Constantin-Paul Ganea, Lucian Pintilie, Ioana Pintilie
Publikováno v:
Materials, Vol 14, Iss 15, p 4215 (2021)
The frequency and temperature dependence of dielectric properties of CH3NH3PbI3 (MAPI) crystals have been studied and analyzed in connection with temperature-dependent structural studies. The obtained results bring arguments for the existence of ferr
Externí odkaz:
https://doaj.org/article/56a7fde3a33743209bcca13789a44758