Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Intersubband-Übergang"'
Autor:
K. Schwarz, C. Schönbein, G. Tränkle, J. Fleissner, Harald Schneider, G. Bihlmann, S. Ehret, G. Böhm
Publikováno v:
Superlattices and Microstructures. 23:1289-1295
We have investigated the influence of the final states of bound-to-continuum transitions within the conduction band of asymmetric quantum well structures on the photocurrent. This influence manifests itself by an energy-dependent oscillation of the c
Publikováno v:
Physical Review B. 51:9786-9790
We have used resonant Raman scattering to study intersubband transitions in InAs/AlSb quantum wells. For optical excitation in resonance with the ${\mathit{E}}_{1}$ band gap of InAs, both high- and low-frequency coupled longitudinal-optical phonon-in
Publikováno v:
Applied Physics Letters. 71:246-248
We have investigated a particular class of photovoltaic quantum well intersubband photodetectors. Each period of the active region in these structures consists of four zones, namely an excitation zone, a drift zone, a capture zone, and a tunneling zo
Autor:
Harald Schneider
Publikováno v:
Journal of Applied Physics. 74:4789-4791
A recently demonstrated transport mechanism giving rise to novel photovoltaic multiquantum well intersubband infrared detectors is analyzed theoretically. It is shown that optimized photovoltaic devices have detectivities that can be even larger than
We show that the spatial distribution of the dopants strongly influences the transport asymmetry and the photovoltage observed in double barrier quantum well intersubband photodetectors. This influence can be quantitatively explained by the local spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::02a87963fb91bb844bf8a3d744682603
https://publica.fraunhofer.de/handle/publica/183605
https://publica.fraunhofer.de/handle/publica/183605
We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one side of the GaAs quantum well and thicker layers of (AlGa)As. The photoresponse of these stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::bfc60d0f9efa74eaed8e0df93db8087c
https://publica.fraunhofer.de/handle/publica/182136
https://publica.fraunhofer.de/handle/publica/182136