Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Intersubband-Übergang"'
Autor:
K. Schwarz, C. Schönbein, G. Tränkle, J. Fleissner, Harald Schneider, G. Bihlmann, S. Ehret, G. Böhm
Publikováno v:
Superlattices and Microstructures. 23:1289-1295
We have investigated the influence of the final states of bound-to-continuum transitions within the conduction band of asymmetric quantum well structures on the photocurrent. This influence manifests itself by an energy-dependent oscillation of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab677fed96a1226b27bef0c4f64a9ead
https://doi.org/10.1006/spmi.1996.0225
https://doi.org/10.1006/spmi.1996.0225
Publikováno v:
Physical Review B. 51:9786-9790
We have used resonant Raman scattering to study intersubband transitions in InAs/AlSb quantum wells. For optical excitation in resonance with the ${\mathit{E}}_{1}$ band gap of InAs, both high- and low-frequency coupled longitudinal-optical phonon-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee042b3c283e12381d7955dac1282d1f
https://doi.org/10.1103/physrevb.51.9786
https://doi.org/10.1103/physrevb.51.9786
Publikováno v:
Applied Physics Letters. 71:246-248
We have investigated a particular class of photovoltaic quantum well intersubband photodetectors. Each period of the active region in these structures consists of four zones, namely an excitation zone, a drift zone, a capture zone, and a tunneling zo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c87985cc16b58a9a0f0d1e3ef2026db9
https://doi.org/10.1063/1.119510
https://doi.org/10.1063/1.119510
Autor:
Harald Schneider
Publikováno v:
Journal of Applied Physics. 74:4789-4791
A recently demonstrated transport mechanism giving rise to novel photovoltaic multiquantum well intersubband infrared detectors is analyzed theoretically. It is shown that optimized photovoltaic devices have detectivities that can be even larger than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca2a35b97e0b5849b991fc536dd3afcb
https://doi.org/10.1063/1.354352
https://doi.org/10.1063/1.354352
We show that the spatial distribution of the dopants strongly influences the transport asymmetry and the photovoltage observed in double barrier quantum well intersubband photodetectors. This influence can be quantitatively explained by the local spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::02a87963fb91bb844bf8a3d744682603
https://publica.fraunhofer.de/handle/publica/183605
https://publica.fraunhofer.de/handle/publica/183605
We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one side of the GaAs quantum well and thicker layers of (AlGa)As. The photoresponse of these stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::bfc60d0f9efa74eaed8e0df93db8087c
https://publica.fraunhofer.de/handle/publica/182136
https://publica.fraunhofer.de/handle/publica/182136
Physik der Halbleiterbauelemente Das Standardwerk zur Physik der Halbleiterbauelemente – erstmals auf Deutsch! Dieses einzigartige Buch, geschrieben von Pionieren auf dem Gebiet, behandelt sämtliche Aspekte der Physik der Halbleiterbauelemente, di
Autor:
Mark Fox
In leicht verständlicher Weise werden klassische Grundlagen bis hin zur aktuellen Forschung vermittelt. Aufgrund langjähriger Lehrerfahrung gelingt es dem Autor, den Zusammenhang von zugrundeliegender Physik und mathematischer Beschreibung anschaul