Zobrazeno 1 - 10
of 697
pro vyhledávání: '"International Technology Roadmap for Semiconductors"'
Autor:
Brahma, Madhuchhanda1, Bescond, Marc2, Logoteta, Demetrio2, Ghosh, Ram Krishna3, Mahapatra, Santanu4
Publikováno v:
IEEE Transactions on Electron Devices. Mar2018, Vol. 65 Issue 3, p1198-1204. 7p.
Autor:
Goering, Richard
Publikováno v:
Electronic Engineering Times (01921541). 1/23/2006, Issue 1407, p1-61. 3p.
Publikováno v:
Electronic Engineering Times (01921541). 7/18/2005, Issue 1380, p1-62. 3p. 2 Color Photographs.
Publikováno v:
IEEE Transactions on Electron Devices. 68:6586-6591
A physical assessment of the lateral gate-all-around (GAA) nanosheet transistor (NSFET) at the G40M16 node (gate length = 12 nm projected for 2028) of the newly defined beyond-Moore International Roadmap for Devices and Systems [~5 nm node of the pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d67bbdc172758542039a9a1e1278ead7
https://doi.org/10.1109/ted.2021.3124472
https://doi.org/10.1109/ted.2021.3124472
Autor:
Alluri Navaneetha, K. Bikshalu
Publikováno v:
Silicon. 14:5855-5862
Demand for accommodating more and new functionalities within a single chip such as SOC needs a novel devices and architecture such as FinFET device instead of MOSFET. FinFET is emerged as non-planar, multigate device to overcome short channel effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81ab4134718b05a0656a4e9646f29200
https://doi.org/10.1007/s12633-021-01345-4
https://doi.org/10.1007/s12633-021-01345-4
Autor:
Yuko Yasunaga
Publikováno v:
IEEE Transactions on Engineering Management. 68:1179-1194
International Technology Roadmap for Semiconductors (ITRS) is referred to as one of the most successful roadmapping attempts in high-tech industries. ITRS constantly gave orientation to industries (device/equipment/materials), academia, and governmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba639a32ae403809ecd093b1e5b9a8a
https://doi.org/10.1109/tem.2020.3018818
https://doi.org/10.1109/tem.2020.3018818
Autor:
Robert Phaal, Clive Kerr
Publikováno v:
IEEE Transactions on Engineering Management. 69:3-5
The papers in this special section focus on the topic of roadmapping. Roadmapping emerged from industrial practice more than five decades ago, initially to support integrated product-technology strategy and planning, and championed by firms, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088dd939357a85d15f8475322c05c106
https://doi.org/10.1109/tem.2021.3094961
https://doi.org/10.1109/tem.2021.3094961
Autor:
Shiqi Liu, Weizhou Wang, Jie Yang, Chen Yang, Jing Lu, Xiaotian Sun, Zhigang Song, Nannan Huo
Publikováno v:
Journal of Materials Chemistry C. 9:14683-14698
Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science 369, 670, 2020). Through ab initio quantum transport simulations, we inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa544ada5094e8d3251f4c67190685d1
https://doi.org/10.1039/d1tc02937a
https://doi.org/10.1039/d1tc02937a
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