Zobrazeno 1 - 10
of 165
pro vyhledávání: '"International Electron Devices Meeting"'
Autor:
LAMMERS, DAVID
Publikováno v:
Solid State Technology. Dec2016, Vol. 59 Issue 8, p15-17. 3p.
Autor:
VER-BRUGGEN, SARA
Publikováno v:
Solid State Technology. Mar2014, Vol. 57 Issue 2, p34-38. 5p.
Autor:
BUSH, STEVE
Publikováno v:
Electronics Weekly. 1/30/2019, Issue 2742, p6-6. 1/2p. 1 Graph.
Publikováno v:
Electronic Device Failure Analysis. Aug2013, Vol. 15 Issue 3, p48-48. 1/4p.
Autor:
Henderson, Chris1 henderson@semitracks.com
Publikováno v:
Electronic Device Failure Analysis. Feb2012, Vol. 14 Issue 1, p34-34. 1p.
Publikováno v:
IEEE Transactions on Electron Devices. Aug2016, Vol. 63 Issue 8, p3368-3368. 1p.
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. Aug2016, Vol. 29 Issue 3, p264-264. 1p.
Publikováno v:
Science. 12/17/2021, Vol. 374 Issue 6574, p1419-1419. 1/2p. 1 Color Photograph.
Publikováno v:
IEEE Transactions on Electron Devices. Jun2015, Vol. 62 Issue 6, p2068-2068. 1p.
Autor:
Lorenzo Ciampolini
Publikováno v:
Integrated Circuits and Systems ISBN: 9783030394950
This chapter explores how static random-access memory (SRAM) functionality is influenced by application of a Body-Bias voltage. Investigating the SRAM stability is a complex task itself, even without any applied Body-Bias. After a short introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a14539d46cd8668e9ce7d1b095989e8
https://doi.org/10.1007/978-3-030-39496-7_5
https://doi.org/10.1007/978-3-030-39496-7_5